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High quality InAs and GaSb thin layers grown on Si (111)

Gorji, Sepideh LU ; Berg, Martin LU ; Dick Thelander, Kimberly LU and Wernersson, Lars-Erik LU (2011) In Journal of Crystal Growth 332(1). p.12-16
Abstract
We have investigated growth of thin epitaxial layers of InAs on Si (1 1 1) substrates by metalorganic vapor phase epitaxy (MOVPE) and successfully grown GaSb layers on InAs. Furthermore, we have studied the effect of growth temperature and material flow on the nucleation stage and also nucleated GaSb nanowires on the underlying GaSb layer. The InAs layers are grown by a standard two-step growth approach. The main parameter under investigation is the effect of incorporating more nucleation layers into the growth process. The addition of more nucleation layers clearly correlates with the surface morphology and quality of the resulting InAs layer. Morphological and structural characterizations prove that a perfect quality InAs layer is... (More)
We have investigated growth of thin epitaxial layers of InAs on Si (1 1 1) substrates by metalorganic vapor phase epitaxy (MOVPE) and successfully grown GaSb layers on InAs. Furthermore, we have studied the effect of growth temperature and material flow on the nucleation stage and also nucleated GaSb nanowires on the underlying GaSb layer. The InAs layers are grown by a standard two-step growth approach. The main parameter under investigation is the effect of incorporating more nucleation layers into the growth process. The addition of more nucleation layers clearly correlates with the surface morphology and quality of the resulting InAs layer. Morphological and structural characterizations prove that a perfect quality InAs layer is achieved by incorporating 4 nucleation layers. Deposited layers with 250 nm thickness and 0.4 nm atomic step roughness have a mobility of 2400 cm(2)/Vs and a carrier concentration of 2.7 x 10(18) cm(-3). Moreover, we have utilized the InAs film to grow a GaSb layer and observed atomic step roughness for a thin film of similar to 300 nm. Finally we demonstrate the growth of GaSb nanowires on the GaSb layer. (C) 2011 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nucleation, Metalorganic vapor phase epitaxy, Indium arsenide, Gallium, antimonide
in
Journal of Crystal Growth
volume
332
issue
1
pages
12 - 16
publisher
Elsevier
external identifiers
  • wos:000295304200003
  • scopus:81155160903
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2011.03.062
language
English
LU publication?
yes
id
e7b952b6-0b86-4742-8dd2-aab3ccb391b3 (old id 2179407)
date added to LUP
2011-10-25 09:29:10
date last changed
2017-10-22 04:07:56
@article{e7b952b6-0b86-4742-8dd2-aab3ccb391b3,
  abstract     = {We have investigated growth of thin epitaxial layers of InAs on Si (1 1 1) substrates by metalorganic vapor phase epitaxy (MOVPE) and successfully grown GaSb layers on InAs. Furthermore, we have studied the effect of growth temperature and material flow on the nucleation stage and also nucleated GaSb nanowires on the underlying GaSb layer. The InAs layers are grown by a standard two-step growth approach. The main parameter under investigation is the effect of incorporating more nucleation layers into the growth process. The addition of more nucleation layers clearly correlates with the surface morphology and quality of the resulting InAs layer. Morphological and structural characterizations prove that a perfect quality InAs layer is achieved by incorporating 4 nucleation layers. Deposited layers with 250 nm thickness and 0.4 nm atomic step roughness have a mobility of 2400 cm(2)/Vs and a carrier concentration of 2.7 x 10(18) cm(-3). Moreover, we have utilized the InAs film to grow a GaSb layer and observed atomic step roughness for a thin film of similar to 300 nm. Finally we demonstrate the growth of GaSb nanowires on the GaSb layer. (C) 2011 Elsevier B.V. All rights reserved.},
  author       = {Gorji, Sepideh and Berg, Martin and Dick Thelander, Kimberly and Wernersson, Lars-Erik},
  issn         = {0022-0248},
  keyword      = {Nucleation,Metalorganic vapor phase epitaxy,Indium arsenide,Gallium,antimonide},
  language     = {eng},
  number       = {1},
  pages        = {12--16},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {High quality InAs and GaSb thin layers grown on Si (111)},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2011.03.062},
  volume       = {332},
  year         = {2011},
}