III/V Nanowire FETs for CMOS?
(2008) 3rd International SiGe, Ge, and Related Compounds Symposium 16(10). p.741-743- Abstract
- III/V MOS transistors are currently attracting considerable attention. The main driving force is that the advantageous transport properties in III/V materials are expected to increase the drive current in the MOS transistors. Major challenges for the III/V MOS technologies include the growth of high-quality III/V materials oil Si Substrates and the control of the MOS interface. Using the nanowire technology, we have recently demonstrated enhancement mode operation of 50 nm L-g InAs nanowire wrap-gate transistors in a vertical configuration. They demonstrate a transconductance of 0.5 S/mm, an inverse sub-threshold slope of about 80 mV/dec., and an I-on/I-off ratio > 1000 for a drive voltage of V-d=0.5 V. These results show promise for... (More)
- III/V MOS transistors are currently attracting considerable attention. The main driving force is that the advantageous transport properties in III/V materials are expected to increase the drive current in the MOS transistors. Major challenges for the III/V MOS technologies include the growth of high-quality III/V materials oil Si Substrates and the control of the MOS interface. Using the nanowire technology, we have recently demonstrated enhancement mode operation of 50 nm L-g InAs nanowire wrap-gate transistors in a vertical configuration. They demonstrate a transconductance of 0.5 S/mm, an inverse sub-threshold slope of about 80 mV/dec., and an I-on/I-off ratio > 1000 for a drive voltage of V-d=0.5 V. These results show promise for the use of nanowires in CMOS applications. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1546404
- author
- Wernersson, Lars-Erik LU
- organization
- publishing date
- 2008
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Sige, Ge, And Related Compounds 3: Materials, Processing, And Devices
- volume
- 16
- issue
- 10
- pages
- 741 - 743
- publisher
- Electrochemical Society
- conference name
- 3rd International SiGe, Ge, and Related Compounds Symposium
- conference location
- Honolulu, HI, United States
- conference dates
- 2008-10-12 - 2008-10-17
- external identifiers
-
- wos:000273336700083
- scopus:63149104037
- ISSN
- 1938-5862
- 1938-6737
- language
- English
- LU publication?
- yes
- id
- 2241461b-3371-4395-b278-4ae602fe37fb (old id 1546404)
- date added to LUP
- 2016-04-01 11:40:45
- date last changed
- 2024-01-07 16:22:57
@inproceedings{2241461b-3371-4395-b278-4ae602fe37fb,
abstract = {{III/V MOS transistors are currently attracting considerable attention. The main driving force is that the advantageous transport properties in III/V materials are expected to increase the drive current in the MOS transistors. Major challenges for the III/V MOS technologies include the growth of high-quality III/V materials oil Si Substrates and the control of the MOS interface. Using the nanowire technology, we have recently demonstrated enhancement mode operation of 50 nm L-g InAs nanowire wrap-gate transistors in a vertical configuration. They demonstrate a transconductance of 0.5 S/mm, an inverse sub-threshold slope of about 80 mV/dec., and an I-on/I-off ratio > 1000 for a drive voltage of V-d=0.5 V. These results show promise for the use of nanowires in CMOS applications.}},
author = {{Wernersson, Lars-Erik}},
booktitle = {{Sige, Ge, And Related Compounds 3: Materials, Processing, And Devices}},
issn = {{1938-5862}},
language = {{eng}},
number = {{10}},
pages = {{741--743}},
publisher = {{Electrochemical Society}},
title = {{III/V Nanowire FETs for CMOS?}},
volume = {{16}},
year = {{2008}},
}