A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
(2005) In IEEE Transactions on Nanotechnology 4(5). p.594-598- Abstract
- SiGe Esaki diodes have been realized by rapid thermal diffusion of phosphorous into an SiGe layer grown by ultra-high-vacuum chemical-vapor-deposition on an Si p(+)-substrate for the first time. The phosphorous-doped SiGe forms the n(+)-electrode, while heavily boron-doped Si0.74Ge0.26 and Si substrate is used for the p(+) electrode. The diodes show a peak current density of 0.18 kA/cm(2), a current peak-to-valley ratio of 2.6 at room temperature, and they exhibit only a weak temperature dependence. Cross-sectional transmission microscopy showed a good crystalline quality of the strained Si0.74Ge0.26 layer even after the diffusion step at 900 degrees C.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/224175
- author
- Wernersson, Lars-Erik LU ; Kabeer, S ; Zela, Vilma LU ; Lind, Erik LU ; Zhang, J ; Seifert, Werner LU ; Kosel, T H and Seabaugh, A
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- ultra-high-vacuum chemical vapor, tunnel diode, Esaki diode, SiGe, deposition (UHV CVD)
- in
- IEEE Transactions on Nanotechnology
- volume
- 4
- issue
- 5
- pages
- 594 - 598
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000231809500018
- scopus:26644439300
- ISSN
- 1536-125X
- DOI
- 10.1109/TNANO.2005.851426
- language
- English
- LU publication?
- yes
- id
- 1aff17dc-8cd5-425f-ad66-5b66cb005068 (old id 224175)
- date added to LUP
- 2016-04-01 16:29:55
- date last changed
- 2024-01-11 09:10:05
@article{1aff17dc-8cd5-425f-ad66-5b66cb005068, abstract = {{SiGe Esaki diodes have been realized by rapid thermal diffusion of phosphorous into an SiGe layer grown by ultra-high-vacuum chemical-vapor-deposition on an Si p(+)-substrate for the first time. The phosphorous-doped SiGe forms the n(+)-electrode, while heavily boron-doped Si0.74Ge0.26 and Si substrate is used for the p(+) electrode. The diodes show a peak current density of 0.18 kA/cm(2), a current peak-to-valley ratio of 2.6 at room temperature, and they exhibit only a weak temperature dependence. Cross-sectional transmission microscopy showed a good crystalline quality of the strained Si0.74Ge0.26 layer even after the diffusion step at 900 degrees C.}}, author = {{Wernersson, Lars-Erik and Kabeer, S and Zela, Vilma and Lind, Erik and Zhang, J and Seifert, Werner and Kosel, T H and Seabaugh, A}}, issn = {{1536-125X}}, keywords = {{ultra-high-vacuum chemical vapor; tunnel diode; Esaki diode; SiGe; deposition (UHV CVD)}}, language = {{eng}}, number = {{5}}, pages = {{594--598}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Nanotechnology}}, title = {{A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation}}, url = {{http://dx.doi.org/10.1109/TNANO.2005.851426}}, doi = {{10.1109/TNANO.2005.851426}}, volume = {{4}}, year = {{2005}}, }