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A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation

Wernersson, Lars-Erik LU ; Kabeer, S; Zela, Vilma LU ; Lind, Erik LU ; Zhang, J; Seifert, Werner LU ; Kosel, T H and Seabaugh, A (2005) In IEEE Transactions on Nanotechnology 4(5). p.594-598
Abstract
SiGe Esaki diodes have been realized by rapid thermal diffusion of phosphorous into an SiGe layer grown by ultra-high-vacuum chemical-vapor-deposition on an Si p(+)-substrate for the first time. The phosphorous-doped SiGe forms the n(+)-electrode, while heavily boron-doped Si0.74Ge0.26 and Si substrate is used for the p(+) electrode. The diodes show a peak current density of 0.18 kA/cm(2), a current peak-to-valley ratio of 2.6 at room temperature, and they exhibit only a weak temperature dependence. Cross-sectional transmission microscopy showed a good crystalline quality of the strained Si0.74Ge0.26 layer even after the diffusion step at 900 degrees C.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ultra-high-vacuum chemical vapor, tunnel diode, Esaki diode, SiGe, deposition (UHV CVD)
in
IEEE Transactions on Nanotechnology
volume
4
issue
5
pages
594 - 598
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000231809500018
  • scopus:26644439300
ISSN
1536-125X
DOI
10.1109/TNANO.2005.851426
language
English
LU publication?
yes
id
1aff17dc-8cd5-425f-ad66-5b66cb005068 (old id 224175)
date added to LUP
2007-08-06 11:51:23
date last changed
2017-01-01 07:06:56
@article{1aff17dc-8cd5-425f-ad66-5b66cb005068,
  abstract     = {SiGe Esaki diodes have been realized by rapid thermal diffusion of phosphorous into an SiGe layer grown by ultra-high-vacuum chemical-vapor-deposition on an Si p(+)-substrate for the first time. The phosphorous-doped SiGe forms the n(+)-electrode, while heavily boron-doped Si0.74Ge0.26 and Si substrate is used for the p(+) electrode. The diodes show a peak current density of 0.18 kA/cm(2), a current peak-to-valley ratio of 2.6 at room temperature, and they exhibit only a weak temperature dependence. Cross-sectional transmission microscopy showed a good crystalline quality of the strained Si0.74Ge0.26 layer even after the diffusion step at 900 degrees C.},
  author       = {Wernersson, Lars-Erik and Kabeer, S and Zela, Vilma and Lind, Erik and Zhang, J and Seifert, Werner and Kosel, T H and Seabaugh, A},
  issn         = {1536-125X},
  keyword      = {ultra-high-vacuum chemical vapor,tunnel diode,Esaki diode,SiGe,deposition (UHV CVD)},
  language     = {eng},
  number       = {5},
  pages        = {594--598},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Nanotechnology},
  title        = {A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation},
  url          = {http://dx.doi.org/10.1109/TNANO.2005.851426},
  volume       = {4},
  year         = {2005},
}