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Strain effects on individual quantum dots: Dependence of cap layer thickness

Persson, Jonas LU ; Håkanson, Ulf LU ; Johansson, Mikael LU ; Samuelson, Lars LU and Pistol, Mats-Erik LU (2005) In Physical Review B (Condensed Matter and Materials Physics) 72(8).
Abstract
We have studied the effects of strain on individual self-assembled quantum dots (QDs) exemplified by InP dots embedded in GaInP. The quantum dot sample was etched from the top and in this way the amount of capping material was reduced. In a sequence of etch cycles, the cap layer was thinned, and the photoluminescence from several individual QDs could be followed as a function of cap layer thickness. The evolution of the emission spectra clearly depended on the quantum dot size. We interpret this as arising from differences in the aspect ratio for quantum dots of different sizes. The influence of the capping layer, for different QD geometries, was modeled using deformation potential theory with the strain calculated using a full... (More)
We have studied the effects of strain on individual self-assembled quantum dots (QDs) exemplified by InP dots embedded in GaInP. The quantum dot sample was etched from the top and in this way the amount of capping material was reduced. In a sequence of etch cycles, the cap layer was thinned, and the photoluminescence from several individual QDs could be followed as a function of cap layer thickness. The evolution of the emission spectra clearly depended on the quantum dot size. We interpret this as arising from differences in the aspect ratio for quantum dots of different sizes. The influence of the capping layer, for different QD geometries, was modeled using deformation potential theory with the strain calculated using a full three-dimensional linear elasticity model. The results agree well with the experimental observations. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
72
issue
8
publisher
American Physical Society
external identifiers
  • wos:000231564600082
  • scopus:27144478600
ISSN
1098-0121
DOI
10.1103/PhysRevB.72.085302
language
English
LU publication?
yes
id
62eadb81-a8da-4c9b-a8c1-0db46259cf29 (old id 224782)
date added to LUP
2007-10-05 12:17:39
date last changed
2017-01-01 06:50:23
@article{62eadb81-a8da-4c9b-a8c1-0db46259cf29,
  abstract     = {We have studied the effects of strain on individual self-assembled quantum dots (QDs) exemplified by InP dots embedded in GaInP. The quantum dot sample was etched from the top and in this way the amount of capping material was reduced. In a sequence of etch cycles, the cap layer was thinned, and the photoluminescence from several individual QDs could be followed as a function of cap layer thickness. The evolution of the emission spectra clearly depended on the quantum dot size. We interpret this as arising from differences in the aspect ratio for quantum dots of different sizes. The influence of the capping layer, for different QD geometries, was modeled using deformation potential theory with the strain calculated using a full three-dimensional linear elasticity model. The results agree well with the experimental observations.},
  articleno    = {085302},
  author       = {Persson, Jonas and Håkanson, Ulf and Johansson, Mikael and Samuelson, Lars and Pistol, Mats-Erik},
  issn         = {1098-0121},
  language     = {eng},
  number       = {8},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Strain effects on individual quantum dots: Dependence of cap layer thickness},
  url          = {http://dx.doi.org/10.1103/PhysRevB.72.085302},
  volume       = {72},
  year         = {2005},
}