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GaSb/GaAs quantum dot systems: in situ synchrotron radiation x-ray photoelectron spectroscopy study

Strocov, VN; Cirlin, GE; Sadowski, Janusz LU ; Kanski, J and Claessen, R (2005) In Nanotechnology 16(8). p.1326-1334
Abstract
GaSb/GaAs quantum dot systems are fabricated using MBE under various growth modes. The as-grown samples are studied with in situ synchrotron radiation XPS covering the As 3d, Sb 4d and Ga 3d core levels and the valence band region. The XPS spectra show dramatic changes with the growth modes, reflecting changes in the local electronic structure and chemical environments of the surface and interface atoms in both quantum dots and wetting layer. A quantum dot specific contribution near the valence band maximum is identified and related to the hole accumulation process. Local valence band offsets measured in the GaSb/GaAs systems evolve over the interface region and depend on the growth modes, which adds another degree of freedom to band... (More)
GaSb/GaAs quantum dot systems are fabricated using MBE under various growth modes. The as-grown samples are studied with in situ synchrotron radiation XPS covering the As 3d, Sb 4d and Ga 3d core levels and the valence band region. The XPS spectra show dramatic changes with the growth modes, reflecting changes in the local electronic structure and chemical environments of the surface and interface atoms in both quantum dots and wetting layer. A quantum dot specific contribution near the valence band maximum is identified and related to the hole accumulation process. Local valence band offsets measured in the GaSb/GaAs systems evolve over the interface region and depend on the growth modes, which adds another degree of freedom to band engineering on the nanoscale. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
16
issue
8
pages
1326 - 1334
publisher
IOP Publishing
external identifiers
  • wos:000231410600058
  • scopus:21244475645
ISSN
0957-4484
DOI
10.1088/0957-4484/16/8/058
language
English
LU publication?
yes
id
b28c9392-3c0d-4d2b-849f-5c49448cbecb (old id 226656)
date added to LUP
2007-08-14 10:58:47
date last changed
2017-07-02 03:40:18
@article{b28c9392-3c0d-4d2b-849f-5c49448cbecb,
  abstract     = {GaSb/GaAs quantum dot systems are fabricated using MBE under various growth modes. The as-grown samples are studied with in situ synchrotron radiation XPS covering the As 3d, Sb 4d and Ga 3d core levels and the valence band region. The XPS spectra show dramatic changes with the growth modes, reflecting changes in the local electronic structure and chemical environments of the surface and interface atoms in both quantum dots and wetting layer. A quantum dot specific contribution near the valence band maximum is identified and related to the hole accumulation process. Local valence band offsets measured in the GaSb/GaAs systems evolve over the interface region and depend on the growth modes, which adds another degree of freedom to band engineering on the nanoscale.},
  author       = {Strocov, VN and Cirlin, GE and Sadowski, Janusz and Kanski, J and Claessen, R},
  issn         = {0957-4484},
  language     = {eng},
  number       = {8},
  pages        = {1326--1334},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {GaSb/GaAs quantum dot systems: in situ synchrotron radiation x-ray photoelectron spectroscopy study},
  url          = {http://dx.doi.org/10.1088/0957-4484/16/8/058},
  volume       = {16},
  year         = {2005},
}