Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs

Wang, Junfeng ; Ba, Guohang ; Meng, Jie LU ; Yang, Shixu ; Tian, Shuyu ; Zhang, Mengqi ; Huang, Fei ; Zheng, Kaibo LU ; Pullerits, Tõnu LU and Tian, Jianjun (2024) In Nano Letters 24(29). p.8894-8901
Abstract

Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core-shell interfacial trap states, thereby boosting the photoluminescence (PL)... (More)

Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core-shell interfacial trap states, thereby boosting the photoluminescence (PL) efficiency of the QDs up to 98%. Also, the Auger recombination is suppressed, extending the biexciton lifetime from 60 to 100 ps. The electroluminescence device based on the InP-based QDs shows a high external quantum efficiency over 10%, further demonstrating high quality QDs synthesized by this process.

(Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
amine-phosphine, InP quantum dot, oriented growth, transition layer
in
Nano Letters
volume
24
issue
29
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:38990690
  • scopus:85198545136
ISSN
1530-6984
DOI
10.1021/acs.nanolett.4c01648
language
English
LU publication?
yes
id
231af64f-533f-46ae-befb-7c2d71424909
date added to LUP
2024-09-26 15:10:16
date last changed
2024-09-26 15:10:47
@article{231af64f-533f-46ae-befb-7c2d71424909,
  abstract     = {{<p>Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core-shell interfacial trap states, thereby boosting the photoluminescence (PL) efficiency of the QDs up to 98%. Also, the Auger recombination is suppressed, extending the biexciton lifetime from 60 to 100 ps. The electroluminescence device based on the InP-based QDs shows a high external quantum efficiency over 10%, further demonstrating high quality QDs synthesized by this process.</p>}},
  author       = {{Wang, Junfeng and Ba, Guohang and Meng, Jie and Yang, Shixu and Tian, Shuyu and Zhang, Mengqi and Huang, Fei and Zheng, Kaibo and Pullerits, Tõnu and Tian, Jianjun}},
  issn         = {{1530-6984}},
  keywords     = {{amine-phosphine; InP quantum dot; oriented growth; transition layer}},
  language     = {{eng}},
  number       = {{29}},
  pages        = {{8894--8901}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.4c01648}},
  doi          = {{10.1021/acs.nanolett.4c01648}},
  volume       = {{24}},
  year         = {{2024}},
}