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Tunable double quantum dots in InAs nanowires defined by local gate electrodes

Fasth, Carina LU ; Fuhrer, Andreas LU ; Björk, Mikael LU and Samuelson, Lars LU (2005) In Nano Letters 5(7). p.1487-1490
Abstract
We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
5
issue
7
pages
1487 - 1490
publisher
The American Chemical Society
external identifiers
  • wos:000230571300054
  • pmid:16178262
  • scopus:23144448095
ISSN
1530-6992
DOI
10.1021/nl050850i
language
English
LU publication?
yes
id
a06be43e-5641-4af0-9a66-2f37422445ac (old id 232264)
date added to LUP
2007-09-21 14:31:14
date last changed
2017-10-22 04:33:16
@article{a06be43e-5641-4af0-9a66-2f37422445ac,
  abstract     = {We report on low-temperature transport measurements on single and double quantum dots defined using local gates to electrostatically deplete InAs nanowires grown by chemical beam epitaxy. This technique allows us to define multiple quantum dots along a semiconducting nanowire and tune the coupling between them.},
  author       = {Fasth, Carina and Fuhrer, Andreas and Björk, Mikael and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  number       = {7},
  pages        = {1487--1490},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Tunable double quantum dots in InAs nanowires defined by local gate electrodes},
  url          = {http://dx.doi.org/10.1021/nl050850i},
  volume       = {5},
  year         = {2005},
}