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Mass transport model for semiconductor nanowire growth

Johansson, Jonas LU ; Svensson, CPT; Mårtensson, Thomas LU ; Samuelson, Lars LU and Seifert, Werner LU (2005) In The Journal of Physical Chemistry Part B 109(28). p.13567-13571
Abstract
We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
The Journal of Physical Chemistry Part B
volume
109
issue
28
pages
13567 - 13571
publisher
The American Chemical Society
external identifiers
  • wos:000230526800024
  • scopus:23144456810
ISSN
1520-5207
DOI
10.1021/jp051702j
language
English
LU publication?
yes
id
7c8a6c24-2979-494a-a4df-933b69911e64 (old id 232303)
date added to LUP
2007-08-17 16:41:01
date last changed
2017-11-19 04:09:36
@article{7c8a6c24-2979-494a-a4df-933b69911e64,
  abstract     = {We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.},
  author       = {Johansson, Jonas and Svensson, CPT and Mårtensson, Thomas and Samuelson, Lars and Seifert, Werner},
  issn         = {1520-5207},
  language     = {eng},
  number       = {28},
  pages        = {13567--13571},
  publisher    = {The American Chemical Society},
  series       = {The Journal of Physical Chemistry Part B},
  title        = {Mass transport model for semiconductor nanowire growth},
  url          = {http://dx.doi.org/10.1021/jp051702j},
  volume       = {109},
  year         = {2005},
}