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InAs epitaxial lateral overgrowth of W masks

Wernersson, Lars-Erik LU ; Lind, Erik LU ; Lembke, J; Martinsson, B and Seifert, Werner LU (2005) In Journal of Crystal Growth 280(1-2). p.81-86
Abstract
The conditions for successful epitaxial lateral overgrowth of W patterns by InAs using low-pressure metalorganic vapour phase epitaxy were studied. The substrates used were InAs (0 0 1) wafers and the range of growth temperatures between 500 and 600 degrees C. The selective growth was investigated as a function of the V/III-ratio on W-ring test structures and wires oriented in different directions. 100-nm-wide wires, oriented in 30 degrees off from the [1 1 0]-direction, were completely covered with InAs without any void formation and the surface was planarized after deposition of 3 50 nm at the V/III-ratio of 14. Wires oriented along the [1 1 0]-direction were found to effectively block the lateral overgrowth by the formation of mesa... (More)
The conditions for successful epitaxial lateral overgrowth of W patterns by InAs using low-pressure metalorganic vapour phase epitaxy were studied. The substrates used were InAs (0 0 1) wafers and the range of growth temperatures between 500 and 600 degrees C. The selective growth was investigated as a function of the V/III-ratio on W-ring test structures and wires oriented in different directions. 100-nm-wide wires, oriented in 30 degrees off from the [1 1 0]-direction, were completely covered with InAs without any void formation and the surface was planarized after deposition of 3 50 nm at the V/III-ratio of 14. Wires oriented along the [1 1 0]-direction were found to effectively block the lateral overgrowth by the formation of mesa ridges limited by {110} and {111} A-planes for V/III-ratios between 14 and 56. All other grating directions showed limited lateral growth. This observed orientation dependence is in general agreement with the overgrowth of GaAs, but shows differences compared to InP. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
W/InAs, InAs, MOVPE, selective area growth, W/GaAs, W/InP
in
Journal of Crystal Growth
volume
280
issue
1-2
pages
81 - 86
publisher
Elsevier
external identifiers
  • wos:000229982600012
  • scopus:19944365899
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2005.03.064
language
English
LU publication?
yes
id
d38d5f2a-ac4b-421a-9ba7-2491b6ab30bd (old id 235663)
date added to LUP
2007-08-15 16:25:31
date last changed
2017-01-01 07:26:08
@article{d38d5f2a-ac4b-421a-9ba7-2491b6ab30bd,
  abstract     = {The conditions for successful epitaxial lateral overgrowth of W patterns by InAs using low-pressure metalorganic vapour phase epitaxy were studied. The substrates used were InAs (0 0 1) wafers and the range of growth temperatures between 500 and 600 degrees C. The selective growth was investigated as a function of the V/III-ratio on W-ring test structures and wires oriented in different directions. 100-nm-wide wires, oriented in 30 degrees off from the [1 1 0]-direction, were completely covered with InAs without any void formation and the surface was planarized after deposition of 3 50 nm at the V/III-ratio of 14. Wires oriented along the [1 1 0]-direction were found to effectively block the lateral overgrowth by the formation of mesa ridges limited by {110} and {111} A-planes for V/III-ratios between 14 and 56. All other grating directions showed limited lateral growth. This observed orientation dependence is in general agreement with the overgrowth of GaAs, but shows differences compared to InP.},
  author       = {Wernersson, Lars-Erik and Lind, Erik and Lembke, J and Martinsson, B and Seifert, Werner},
  issn         = {0022-0248},
  keyword      = {W/InAs,InAs,MOVPE,selective area growth,W/GaAs,W/InP},
  language     = {eng},
  number       = {1-2},
  pages        = {81--86},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {InAs epitaxial lateral overgrowth of W masks},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2005.03.064},
  volume       = {280},
  year         = {2005},
}