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Epitaxial silicide formation in the Mg/Si(111) system

Wigren, C. ; Andersen, J. N. LU ; Nyholm, R. LU and Karlsson, U. O. (1993) In Surface Science 289(3). p.290-296
Abstract

The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Surface Science
volume
289
issue
3
pages
7 pages
publisher
Elsevier
external identifiers
  • scopus:0027609487
ISSN
0039-6028
DOI
10.1016/0039-6028(93)90661-3
language
English
LU publication?
yes
id
23d4cb26-e860-43e4-ae8e-72b06a5e0468
date added to LUP
2016-04-29 11:22:02
date last changed
2020-12-27 04:32:03
@article{23d4cb26-e860-43e4-ae8e-72b06a5e0468,
  abstract     = {{<p>The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg<sub>2</sub>Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level.</p>}},
  author       = {{Wigren, C. and Andersen, J. N. and Nyholm, R. and Karlsson, U. O.}},
  issn         = {{0039-6028}},
  language     = {{eng}},
  month        = {{06}},
  number       = {{3}},
  pages        = {{290--296}},
  publisher    = {{Elsevier}},
  series       = {{Surface Science}},
  title        = {{Epitaxial silicide formation in the Mg/Si(111) system}},
  url          = {{http://dx.doi.org/10.1016/0039-6028(93)90661-3}},
  doi          = {{10.1016/0039-6028(93)90661-3}},
  volume       = {{289}},
  year         = {{1993}},
}