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Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.

Pettersson, Håkan; Zubritskaya, Irina; Nghia, Ngo Tuan; Wallentin, Jesper LU ; Borgström, Magnus LU ; Storm, Kristian LU ; Landin, Lars; Wickert, Peter; Capasso, Federico and Samuelson, Lars LU (2012) In Nanotechnology 23(13).
Abstract
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p(+)-i-n(+) photodetectors based on large ensembles of self-assembled, vertically aligned i-n(+) InP nanowires monolithically grown on a common p(+) InP substrate without any buffer layer. The nanowires have a polytype modulated crystal structure of wurtzite and zinc blende. The electrical data display excellent rectifying behavior with an ideality factor of about 2.5 at 300 K. The ideality factor scales with 1/T, which possibly reflects deviations from classical transport models due to the mixed crystal phase of the nanowires. The observed dark leakage current is of the order of merely ∼100 fA/nanowire at 1 V reverse bias. The detectors... (More)
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p(+)-i-n(+) photodetectors based on large ensembles of self-assembled, vertically aligned i-n(+) InP nanowires monolithically grown on a common p(+) InP substrate without any buffer layer. The nanowires have a polytype modulated crystal structure of wurtzite and zinc blende. The electrical data display excellent rectifying behavior with an ideality factor of about 2.5 at 300 K. The ideality factor scales with 1/T, which possibly reflects deviations from classical transport models due to the mixed crystal phase of the nanowires. The observed dark leakage current is of the order of merely ∼100 fA/nanowire at 1 V reverse bias. The detectors display a linear increase of the photocurrent with reverse bias up to about 10 pA/nanowire at 5 V. From spectrally resolved measurements, we conclude that the photocurrent is primarily generated by funneling photogenerated carriers from the substrate into the NWs. Contributions from direct excitation of the NWs become increasingly important at low temperatures. The photocurrent decreases with temperature with an activation energy of about 50 meV, which we discuss in terms of a temperature-dependent diffusion length in the substrate and perturbed transport through the mixed-phase nanowires. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
23
issue
13
publisher
IOP Publishing
external identifiers
  • wos:000301663900001
  • pmid:22418741
  • scopus:84858387129
ISSN
0957-4484
DOI
10.1088/0957-4484/23/13/135201
language
English
LU publication?
yes
id
d0af790f-55e9-4ec0-80c7-29ee5a28285d (old id 2431802)
date added to LUP
2012-04-04 14:06:48
date last changed
2017-07-30 03:09:09
@article{d0af790f-55e9-4ec0-80c7-29ee5a28285d,
  abstract     = {We report on a comprehensive study of electrical and optical properties of efficient near-infrared p(+)-i-n(+) photodetectors based on large ensembles of self-assembled, vertically aligned i-n(+) InP nanowires monolithically grown on a common p(+) InP substrate without any buffer layer. The nanowires have a polytype modulated crystal structure of wurtzite and zinc blende. The electrical data display excellent rectifying behavior with an ideality factor of about 2.5 at 300 K. The ideality factor scales with 1/T, which possibly reflects deviations from classical transport models due to the mixed crystal phase of the nanowires. The observed dark leakage current is of the order of merely ∼100 fA/nanowire at 1 V reverse bias. The detectors display a linear increase of the photocurrent with reverse bias up to about 10 pA/nanowire at 5 V. From spectrally resolved measurements, we conclude that the photocurrent is primarily generated by funneling photogenerated carriers from the substrate into the NWs. Contributions from direct excitation of the NWs become increasingly important at low temperatures. The photocurrent decreases with temperature with an activation energy of about 50 meV, which we discuss in terms of a temperature-dependent diffusion length in the substrate and perturbed transport through the mixed-phase nanowires.},
  articleno    = {135201},
  author       = {Pettersson, Håkan and Zubritskaya, Irina and Nghia, Ngo Tuan and Wallentin, Jesper and Borgström, Magnus and Storm, Kristian and Landin, Lars and Wickert, Peter and Capasso, Federico and Samuelson, Lars},
  issn         = {0957-4484},
  language     = {eng},
  number       = {13},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.},
  url          = {http://dx.doi.org/10.1088/0957-4484/23/13/135201},
  volume       = {23},
  year         = {2012},
}