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Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.

Ganjipour, Bahram LU ; Wallentin, Jesper LU ; Borgström, Magnus LU ; Samuelson, Lars LU and Thelander, Claes LU (2012) In ACS Nano 6(4). p.3109-3113
Abstract
We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
ACS Nano
volume
6
issue
4
pages
3109 - 3113
publisher
The American Chemical Society
external identifiers
  • wos:000303099300028
  • pmid:22414204
  • scopus:84860364658
ISSN
1936-086X
DOI
10.1021/nn204838m
language
English
LU publication?
yes
id
1c0d7997-8500-44c4-b7ed-01837d5c85e7 (old id 2431879)
date added to LUP
2012-04-04 14:08:38
date last changed
2017-11-12 03:03:10
@article{1c0d7997-8500-44c4-b7ed-01837d5c85e7,
  abstract     = {We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.},
  author       = {Ganjipour, Bahram and Wallentin, Jesper and Borgström, Magnus and Samuelson, Lars and Thelander, Claes},
  issn         = {1936-086X},
  language     = {eng},
  number       = {4},
  pages        = {3109--3113},
  publisher    = {The American Chemical Society},
  series       = {ACS Nano},
  title        = {Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.},
  url          = {http://dx.doi.org/10.1021/nn204838m},
  volume       = {6},
  year         = {2012},
}