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Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C

Adell, Martin LU ; Ilver, L; Kanski, J; Stanciu, V; Svedlindh, P; Sadowski, J; Domagala, JZ; Terki, F; Hernandez, C and Charar, S (2005) In Applied Physics Letters 86(11).
Abstract
In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
86
issue
11
publisher
American Institute of Physics
external identifiers
  • wos:000228050700056
  • scopus:18044365211
ISSN
0003-6951
DOI
10.1063/1.1875746
language
English
LU publication?
yes
id
ba13e25a-466c-45b6-a942-bcf500b8d23a (old id 247227)
date added to LUP
2007-08-21 11:05:42
date last changed
2017-11-19 03:36:34
@article{ba13e25a-466c-45b6-a942-bcf500b8d23a,
  abstract     = {In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.},
  author       = {Adell, Martin and Ilver, L and Kanski, J and Stanciu, V and Svedlindh, P and Sadowski, J and Domagala, JZ and Terki, F and Hernandez, C and Charar, S},
  issn         = {0003-6951},
  language     = {eng},
  number       = {11},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C},
  url          = {http://dx.doi.org/10.1063/1.1875746},
  volume       = {86},
  year         = {2005},
}