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Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy

Ouattara, Lassana LU ; Mikkelsen, Anders LU ; Lundgren, Edvin LU ; Borgström, Magnus LU ; Samuelson, Lars LU and Seifert, Werner LU (2004) In Nanotechnology 15(12). p.1701-1707
Abstract
We report on cross-sectional scanning tunnelling microscopy (XSTM) measurements on vertically stacked InAs quantum dots in InP barriers. We have investigated two-, five- and tenfold stacked quantum dot structures,grown by low-pressure metal-organic vapour phase epitaxy. The XSTM images reveal that the quantum dots are generally vertically well aligned, and have a truncated pyramidal shape in agreement with similar studies of InAs dots in GaAs. STM images displaying atomic resolution indicate that the dots have a pure InAs stoichiometry, with intermixing only occurring in the top and bottom dot rows. Further, we have investigated various anomalies (considered as defects) as observed in the quantum dot stacks. The origins of these anomalies... (More)
We report on cross-sectional scanning tunnelling microscopy (XSTM) measurements on vertically stacked InAs quantum dots in InP barriers. We have investigated two-, five- and tenfold stacked quantum dot structures,grown by low-pressure metal-organic vapour phase epitaxy. The XSTM images reveal that the quantum dots are generally vertically well aligned, and have a truncated pyramidal shape in agreement with similar studies of InAs dots in GaAs. STM images displaying atomic resolution indicate that the dots have a pure InAs stoichiometry, with intermixing only occurring in the top and bottom dot rows. Further, we have investigated various anomalies (considered as defects) as observed in the quantum dot stacks. The origins of these anomalies are discussed and compared to theoretical predictions available so far. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
15
issue
12
pages
1701 - 1707
publisher
IOP Publishing
external identifiers
  • wos:000225843200001
  • scopus:11144269676
ISSN
0957-4484
DOI
10.1088/0957-4484/15/12/001
language
English
LU publication?
yes
id
08a79920-d890-491e-84bb-b721642af95f (old id 258310)
date added to LUP
2007-10-29 13:37:13
date last changed
2017-01-01 04:41:09
@article{08a79920-d890-491e-84bb-b721642af95f,
  abstract     = {We report on cross-sectional scanning tunnelling microscopy (XSTM) measurements on vertically stacked InAs quantum dots in InP barriers. We have investigated two-, five- and tenfold stacked quantum dot structures,grown by low-pressure metal-organic vapour phase epitaxy. The XSTM images reveal that the quantum dots are generally vertically well aligned, and have a truncated pyramidal shape in agreement with similar studies of InAs dots in GaAs. STM images displaying atomic resolution indicate that the dots have a pure InAs stoichiometry, with intermixing only occurring in the top and bottom dot rows. Further, we have investigated various anomalies (considered as defects) as observed in the quantum dot stacks. The origins of these anomalies are discussed and compared to theoretical predictions available so far.},
  author       = {Ouattara, Lassana and Mikkelsen, Anders and Lundgren, Edvin and Borgström, Magnus and Samuelson, Lars and Seifert, Werner},
  issn         = {0957-4484},
  language     = {eng},
  number       = {12},
  pages        = {1701--1707},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy},
  url          = {http://dx.doi.org/10.1088/0957-4484/15/12/001},
  volume       = {15},
  year         = {2004},
}