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Growth mechanisms for GaAs nanowires grown in CBE

Persson, Ann LU ; Ohlsson, Jonas LU ; Jeppesen, Sören LU and Samuelson, Lars LU (2004) In Journal of Crystal Growth 272(1-4). p.167-174
Abstract
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures on (I 1 1) B-oriented substrates in chemical beam epitaxy (CBE), to establish the mechanisms that govern wire growth and to optimize growth conditions. The grown nanowires were characterized with a scanning electron microscope (SEM). We found two mechanisms to be of importance for wire growth: (i) sufficiently long diffusion length of the group-III material on the 2D substrate surface and on the side facets of the nanowire to obtain rod-shaped nanowires and (ii) growth conditions that suppress growth rate on adjacent surfaces to enhance the wire growth. Favorable conditions for these mechanisms are growth temperatures between 515 and 535... (More)
We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures on (I 1 1) B-oriented substrates in chemical beam epitaxy (CBE), to establish the mechanisms that govern wire growth and to optimize growth conditions. The grown nanowires were characterized with a scanning electron microscope (SEM). We found two mechanisms to be of importance for wire growth: (i) sufficiently long diffusion length of the group-III material on the 2D substrate surface and on the side facets of the nanowire to obtain rod-shaped nanowires and (ii) growth conditions that suppress growth rate on adjacent surfaces to enhance the wire growth. Favorable conditions for these mechanisms are growth temperatures between 515 and 535 degreesC, and As-rich growth conditions. Furthermore, we suggest that the growth mechanism of nanowires in CBE is based on surface-selective-growth (SSG) with a solid seed particle rather than conventional vapor-liquid-solid (VLS) growth. (C) 2004 Elsevier B.V. All rights reserved. (Less)
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organization
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Contribution to journal
publication status
published
subject
keywords
nanostructures, semiconducting gallium arsenide, selective, chemical beam epitaxy, epitaxy, surface processes
in
Journal of Crystal Growth
volume
272
issue
1-4
pages
167 - 174
publisher
Elsevier
external identifiers
  • wos:000225890300029
  • scopus:9944245396
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2004.08.106
language
English
LU publication?
yes
id
589b3d7c-b026-4017-a44d-c134dd79df3d (old id 258428)
date added to LUP
2008-01-16 11:36:25
date last changed
2017-11-19 04:10:54
@article{589b3d7c-b026-4017-a44d-c134dd79df3d,
  abstract     = {We have investigated the growth of GaAs nanowires as a function of temperatures and source pressures on (I 1 1) B-oriented substrates in chemical beam epitaxy (CBE), to establish the mechanisms that govern wire growth and to optimize growth conditions. The grown nanowires were characterized with a scanning electron microscope (SEM). We found two mechanisms to be of importance for wire growth: (i) sufficiently long diffusion length of the group-III material on the 2D substrate surface and on the side facets of the nanowire to obtain rod-shaped nanowires and (ii) growth conditions that suppress growth rate on adjacent surfaces to enhance the wire growth. Favorable conditions for these mechanisms are growth temperatures between 515 and 535 degreesC, and As-rich growth conditions. Furthermore, we suggest that the growth mechanism of nanowires in CBE is based on surface-selective-growth (SSG) with a solid seed particle rather than conventional vapor-liquid-solid (VLS) growth. (C) 2004 Elsevier B.V. All rights reserved.},
  author       = {Persson, Ann and Ohlsson, Jonas and Jeppesen, Sören and Samuelson, Lars},
  issn         = {0022-0248},
  keyword      = {nanostructures,semiconducting gallium arsenide,selective,chemical beam epitaxy,epitaxy,surface processes},
  language     = {eng},
  number       = {1-4},
  pages        = {167--174},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Growth mechanisms for GaAs nanowires grown in CBE},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2004.08.106},
  volume       = {272},
  year         = {2004},
}