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Photoemission study of LT-GaAs

Mickevicius, S; Sadowski, Janusz LU ; Balakauskas, S and Leandersson, A (2004) European Materials Research Society Fall Meeting, Symposium B In Proceedings of the European Materials Research Society Fall Meeting, Symposium B (Journal of Alloys and Compounds) 382(1-2). p.234-238
Abstract
The electronic structure of GaAs (100) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As-2/Ga flux ratios. Analysis of As 3d core level spectra does not indicate qualitative differences in respect to high temperature grown GaAs (100) layers. The Ga 3d core level spectra include a new component in comparison to the spectra of high temperature grown GaAs. The origin of this component is attributed to high density of As antisites in low-temperature grown GaAs. (C) 2004 Elsevier B.V. All rights reserved.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
crystal growth, semiconductors, synchrotron radiation, photoemission, spectroscopy, valence band, antisite defect, gallium arsenide, molecular beam epitaxy
in
Proceedings of the European Materials Research Society Fall Meeting, Symposium B (Journal of Alloys and Compounds)
volume
382
issue
1-2
pages
234 - 238
publisher
Elsevier
conference name
European Materials Research Society Fall Meeting, Symposium B
external identifiers
  • wos:000225154200037
  • scopus:8344276683
ISSN
0925-8388
DOI
10.1016/j.jallcom.2004.06.006
language
English
LU publication?
yes
id
9404d91e-3072-4f2d-973e-8a3c81fadd79 (old id 260128)
date added to LUP
2007-10-28 15:03:00
date last changed
2017-01-01 06:59:53
@inproceedings{9404d91e-3072-4f2d-973e-8a3c81fadd79,
  abstract     = {The electronic structure of GaAs (100) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As-2/Ga flux ratios. Analysis of As 3d core level spectra does not indicate qualitative differences in respect to high temperature grown GaAs (100) layers. The Ga 3d core level spectra include a new component in comparison to the spectra of high temperature grown GaAs. The origin of this component is attributed to high density of As antisites in low-temperature grown GaAs. (C) 2004 Elsevier B.V. All rights reserved.},
  author       = {Mickevicius, S and Sadowski, Janusz and Balakauskas, S and Leandersson, A},
  booktitle    = {Proceedings of the European Materials Research Society Fall Meeting, Symposium B (Journal of Alloys and Compounds)},
  issn         = {0925-8388},
  keyword      = {crystal growth,semiconductors,synchrotron radiation,photoemission,spectroscopy,valence band,antisite defect,gallium arsenide,molecular beam epitaxy},
  language     = {eng},
  number       = {1-2},
  pages        = {234--238},
  publisher    = {Elsevier},
  title        = {Photoemission study of LT-GaAs},
  url          = {http://dx.doi.org/10.1016/j.jallcom.2004.06.006},
  volume       = {382},
  year         = {2004},
}