Photoemission study of LT-GaAs
(2004) European Materials Research Society Fall Meeting, 2003 382(1-2). p.234-238- Abstract
- The electronic structure of GaAs (100) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As-2/Ga flux ratios. Analysis of As 3d core level spectra does not indicate qualitative differences in respect to high temperature grown GaAs (100) layers. The Ga 3d core level spectra include a new component in comparison to the spectra of high temperature grown GaAs. The origin of this component is attributed to high density of As antisites in low-temperature grown GaAs. (C) 2004 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/260128
- author
- Mickevicius, S ; Sadowski, Janusz LU ; Balakauskas, S and Leandersson, A
- organization
- publishing date
- 2004
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- crystal growth, semiconductors, synchrotron radiation, photoemission, spectroscopy, valence band, antisite defect, gallium arsenide, molecular beam epitaxy
- host publication
- Proceedings of the European Materials Research Society Fall Meeting, Symposium B (Journal of Alloys and Compounds)
- volume
- 382
- issue
- 1-2
- pages
- 234 - 238
- publisher
- Elsevier
- conference name
- European Materials Research Society Fall Meeting, 2003
- conference location
- Warsaw, Poland
- conference dates
- 2003-09-15 - 2003-09-19
- external identifiers
-
- wos:000225154200037
- scopus:8344276683
- ISSN
- 0925-8388
- DOI
- 10.1016/j.jallcom.2004.06.006
- language
- English
- LU publication?
- yes
- id
- 9404d91e-3072-4f2d-973e-8a3c81fadd79 (old id 260128)
- date added to LUP
- 2016-04-01 16:14:49
- date last changed
- 2022-01-28 18:23:03
@inproceedings{9404d91e-3072-4f2d-973e-8a3c81fadd79, abstract = {{The electronic structure of GaAs (100) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As-2/Ga flux ratios. Analysis of As 3d core level spectra does not indicate qualitative differences in respect to high temperature grown GaAs (100) layers. The Ga 3d core level spectra include a new component in comparison to the spectra of high temperature grown GaAs. The origin of this component is attributed to high density of As antisites in low-temperature grown GaAs. (C) 2004 Elsevier B.V. All rights reserved.}}, author = {{Mickevicius, S and Sadowski, Janusz and Balakauskas, S and Leandersson, A}}, booktitle = {{Proceedings of the European Materials Research Society Fall Meeting, Symposium B (Journal of Alloys and Compounds)}}, issn = {{0925-8388}}, keywords = {{crystal growth; semiconductors; synchrotron radiation; photoemission; spectroscopy; valence band; antisite defect; gallium arsenide; molecular beam epitaxy}}, language = {{eng}}, number = {{1-2}}, pages = {{234--238}}, publisher = {{Elsevier}}, title = {{Photoemission study of LT-GaAs}}, url = {{http://dx.doi.org/10.1016/j.jallcom.2004.06.006}}, doi = {{10.1016/j.jallcom.2004.06.006}}, volume = {{382}}, year = {{2004}}, }