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Charging control of InP/GaInP quantum dots by heterostructure design

Persson, Jonas LU ; Hessman, Dan LU ; Pistol, Mats-Erik LU ; Seifert, Werner LU and Samuelson, Lars LU (2004) In Applied Physics Letters 85(21). p.5043-5045
Abstract
Semiconductor quantum dots are often charged due to accumulation from a doped host material. Using low-temperature photoluminescence, we have studied the charging of single self-assembled InP dots in structures designed to control the electron population in a weakly n-type environment. By using designed heterostructures to position the Fermi level of the structure, not requiring electric fields or currents, we show that the electron accumulation can be reduced from approximately 18 electrons in the dot to approximately 8 electrons. In particular, we show that the single quantum dot luminescence spectrum of the Fermi-level pinned structure perfectly matches the low-energy part of the highly charged reference spectrum, a phenomenon predicted... (More)
Semiconductor quantum dots are often charged due to accumulation from a doped host material. Using low-temperature photoluminescence, we have studied the charging of single self-assembled InP dots in structures designed to control the electron population in a weakly n-type environment. By using designed heterostructures to position the Fermi level of the structure, not requiring electric fields or currents, we show that the electron accumulation can be reduced from approximately 18 electrons in the dot to approximately 8 electrons. In particular, we show that the single quantum dot luminescence spectrum of the Fermi-level pinned structure perfectly matches the low-energy part of the highly charged reference spectrum, a phenomenon predicted by the model for multiple charging of quantum dots. (C) 2004 American Institute of Physics. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
85
issue
21
pages
5043 - 5045
publisher
American Institute of Physics
external identifiers
  • wos:000225300600072
  • scopus:19144367844
ISSN
0003-6951
DOI
10.1063/1.1827327
language
English
LU publication?
yes
id
88b7d2a5-d35b-4d8b-9476-b43ccfc5bc45 (old id 260357)
date added to LUP
2007-10-29 15:27:12
date last changed
2017-01-01 04:54:05
@article{88b7d2a5-d35b-4d8b-9476-b43ccfc5bc45,
  abstract     = {Semiconductor quantum dots are often charged due to accumulation from a doped host material. Using low-temperature photoluminescence, we have studied the charging of single self-assembled InP dots in structures designed to control the electron population in a weakly n-type environment. By using designed heterostructures to position the Fermi level of the structure, not requiring electric fields or currents, we show that the electron accumulation can be reduced from approximately 18 electrons in the dot to approximately 8 electrons. In particular, we show that the single quantum dot luminescence spectrum of the Fermi-level pinned structure perfectly matches the low-energy part of the highly charged reference spectrum, a phenomenon predicted by the model for multiple charging of quantum dots. (C) 2004 American Institute of Physics.},
  author       = {Persson, Jonas and Hessman, Dan and Pistol, Mats-Erik and Seifert, Werner and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {21},
  pages        = {5043--5045},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Charging control of InP/GaInP quantum dots by heterostructure design},
  url          = {http://dx.doi.org/10.1063/1.1827327},
  volume       = {85},
  year         = {2004},
}