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Fabrication of cantilever based mass sensors integrated with CMOS using direct write laser lithography on resist

Forsen, E; Ghatnekar-Nilsson, Sara LU ; Carlberg, Patrick LU ; Abadal, G; Perez-Murano, F; Esteve, J; Montserrat, J; Figueras, E; Campabadal, F and Verd, J, et al. (2004) In Nanotechnology 15(10). p.628-633
Abstract
A CMOS compatible direct write laser lithography technique has been developed for cantilever fabrication on pre-fabricated standard CMOS. We have developed cantilever based sensors for mass measurements in vacuum and air. The cantilever is actuated into lateral vibration by electrostatic excitation and the resonant frequency is detected by capacitive readout. The device is integrated on standard CMOS circuitry. In the work a new direct write laser lithography (DWL) technique is introduced. This laser lithography technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of poly(methyl methacrylate) (PMMA) on lift-off resist (LOR). Laser writing evaporates the PMMA, exposing the LOR. A resist solvent... (More)
A CMOS compatible direct write laser lithography technique has been developed for cantilever fabrication on pre-fabricated standard CMOS. We have developed cantilever based sensors for mass measurements in vacuum and air. The cantilever is actuated into lateral vibration by electrostatic excitation and the resonant frequency is detected by capacitive readout. The device is integrated on standard CMOS circuitry. In the work a new direct write laser lithography (DWL) technique is introduced. This laser lithography technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of poly(methyl methacrylate) (PMMA) on lift-off resist (LOR). Laser writing evaporates the PMMA, exposing the LOR. A resist solvent is used to transfer the pattern down to the substrate. Metal lift-off followed by reactive ion etching is used for patterning the structural poly-Si layer in the CMOS. The developed laser lithography technique is compatible with resist exposure techniques such as electron beam lithography. We demonstrate the fabrication of sub-micrometre wide suspended cantilevers as well as metal lift-off with feature line widths down to approximately 500 nm. (Less)
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publication status
published
subject
in
Nanotechnology
volume
15
issue
10
pages
628 - 633
publisher
IOP Publishing
external identifiers
  • wos:000224812200022
  • scopus:7044265020
ISSN
0957-4484
DOI
10.1088/0957-4484/15/10/021
language
English
LU publication?
yes
id
20dde086-0ab7-4e16-a21c-e4c1cc44904a (old id 262338)
date added to LUP
2007-10-22 18:29:40
date last changed
2017-05-21 03:39:28
@article{20dde086-0ab7-4e16-a21c-e4c1cc44904a,
  abstract     = {A CMOS compatible direct write laser lithography technique has been developed for cantilever fabrication on pre-fabricated standard CMOS. We have developed cantilever based sensors for mass measurements in vacuum and air. The cantilever is actuated into lateral vibration by electrostatic excitation and the resonant frequency is detected by capacitive readout. The device is integrated on standard CMOS circuitry. In the work a new direct write laser lithography (DWL) technique is introduced. This laser lithography technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of poly(methyl methacrylate) (PMMA) on lift-off resist (LOR). Laser writing evaporates the PMMA, exposing the LOR. A resist solvent is used to transfer the pattern down to the substrate. Metal lift-off followed by reactive ion etching is used for patterning the structural poly-Si layer in the CMOS. The developed laser lithography technique is compatible with resist exposure techniques such as electron beam lithography. We demonstrate the fabrication of sub-micrometre wide suspended cantilevers as well as metal lift-off with feature line widths down to approximately 500 nm.},
  author       = {Forsen, E and Ghatnekar-Nilsson, Sara and Carlberg, Patrick and Abadal, G and Perez-Murano, F and Esteve, J and Montserrat, J and Figueras, E and Campabadal, F and Verd, J and Montelius, Lars and Barniol, N and Boisen, A},
  issn         = {0957-4484},
  language     = {eng},
  number       = {10},
  pages        = {628--633},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Fabrication of cantilever based mass sensors integrated with CMOS using direct write laser lithography on resist},
  url          = {http://dx.doi.org/10.1088/0957-4484/15/10/021},
  volume       = {15},
  year         = {2004},
}