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Evidence for capture of holes into resonant states in boron-doped silicon

Yen, ST; Tulupenko, VN; Cheng, ES; Chung, PK; Lee, CP; Dalakyan, AT and Chao, Koung-An LU (2004) In Applied Physics Reviews 96(9). p.4970-4975
Abstract
The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of... (More)
The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
96
issue
9
pages
4970 - 4975
publisher
American Institute of Physics
external identifiers
  • wos:000224799300038
  • scopus:9744246778
ISSN
0021-8979
DOI
10.1063/1.1795985
language
English
LU publication?
yes
id
557941da-ed8a-4f05-9093-7dfed578863c (old id 262754)
date added to LUP
2007-11-07 08:25:46
date last changed
2017-01-01 04:54:27
@article{557941da-ed8a-4f05-9093-7dfed578863c,
  abstract     = {The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics.},
  author       = {Yen, ST and Tulupenko, VN and Cheng, ES and Chung, PK and Lee, CP and Dalakyan, AT and Chao, Koung-An},
  issn         = {0021-8979},
  language     = {eng},
  number       = {9},
  pages        = {4970--4975},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Evidence for capture of holes into resonant states in boron-doped silicon},
  url          = {http://dx.doi.org/10.1063/1.1795985},
  volume       = {96},
  year         = {2004},
}