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Role of surface diffusion in chemical beam epitaxy of InAs nanowires

Jensen, Linus; Björk, Mikael LU ; Jeppesen, Sören LU ; Persson, Ann LU ; Ohlsson, Jonas LU and Samuelson, Lars LU (2004) In Nano Letters 4(10). p.1961-1964
Abstract
We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and width. Investigations of wire growth rate as a function of diameter, density, and time were performed and the results indicate that 80% of the growth is due to In species diffusing from the (111)B substrate surface. Furthermore, we have established that the diffusion length on the {110} wire side surfaces exceeds 10 mum. We also observe a decreasing length growth rate with increasing wire diameter.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
4
issue
10
pages
1961 - 1964
publisher
The American Chemical Society
external identifiers
  • wos:000224514800027
  • scopus:7544245915
ISSN
1530-6992
DOI
10.1021/nl048825k
language
English
LU publication?
yes
id
daaac1c0-c46e-4d4a-afd9-78863307b161 (old id 263684)
date added to LUP
2007-10-23 12:22:14
date last changed
2017-08-27 05:24:18
@article{daaac1c0-c46e-4d4a-afd9-78863307b161,
  abstract     = {We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and width. Investigations of wire growth rate as a function of diameter, density, and time were performed and the results indicate that 80% of the growth is due to In species diffusing from the (111)B substrate surface. Furthermore, we have established that the diffusion length on the {110} wire side surfaces exceeds 10 mum. We also observe a decreasing length growth rate with increasing wire diameter.},
  author       = {Jensen, Linus and Björk, Mikael and Jeppesen, Sören and Persson, Ann and Ohlsson, Jonas and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  number       = {10},
  pages        = {1961--1964},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Role of surface diffusion in chemical beam epitaxy of InAs nanowires},
  url          = {http://dx.doi.org/10.1021/nl048825k},
  volume       = {4},
  year         = {2004},
}