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Electron mean free path for GaAs(100)-c(4x4) at very low energies

Jiricek, P; Cukr, M; Bartos, I and Sadowski, Janusz LU (2004) 22nd European Conference on Surface Science In Proceedings of the 22nd European Conference on Surface Science (Surface Science) 566. p.1196-1199
Abstract
Electron mean free path (MFP) was determined by the angular resolved photoemission in 10-40 eV energy range for GaAs(100)-c(4 x 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(100). (C) 2004 Elsevier B.V. All rights reserved.
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
electron solid interactions, spectroscopy, synchrotron radiation photoelectron, molecular beam epitaxy, gallium arsenide
in
Proceedings of the 22nd European Conference on Surface Science (Surface Science)
volume
566
pages
1196 - 1199
publisher
Elsevier
conference name
22nd European Conference on Surface Science
external identifiers
  • wos:000224238300097
  • scopus:4544309599
ISSN
0039-6028
DOI
10.1016/j.susc.2004.06.088
language
English
LU publication?
yes
id
ce6e59ac-0580-4192-a2b2-04b8f2ecad5f (old id 264204)
date added to LUP
2007-10-23 12:39:00
date last changed
2017-01-01 07:11:52
@inproceedings{ce6e59ac-0580-4192-a2b2-04b8f2ecad5f,
  abstract     = {Electron mean free path (MFP) was determined by the angular resolved photoemission in 10-40 eV energy range for GaAs(100)-c(4 x 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(100). (C) 2004 Elsevier B.V. All rights reserved.},
  author       = {Jiricek, P and Cukr, M and Bartos, I and Sadowski, Janusz},
  booktitle    = {Proceedings of the 22nd European Conference on Surface Science (Surface Science)},
  issn         = {0039-6028},
  keyword      = {electron solid interactions,spectroscopy,synchrotron radiation photoelectron,molecular beam epitaxy,gallium arsenide},
  language     = {eng},
  pages        = {1196--1199},
  publisher    = {Elsevier},
  title        = {Electron mean free path for GaAs(100)-c(4x4) at very low energies},
  url          = {http://dx.doi.org/10.1016/j.susc.2004.06.088},
  volume       = {566},
  year         = {2004},
}