Electron mean free path for GaAs(100)-c(4x4) at very low energies
(2004) 22nd European Conference on Surface Science 566. p.1196-1199- Abstract
- Electron mean free path (MFP) was determined by the angular resolved photoemission in 10-40 eV energy range for GaAs(100)-c(4 x 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(100). (C) 2004 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/264204
- author
- Jiricek, P ; Cukr, M ; Bartos, I and Sadowski, Janusz LU
- organization
- publishing date
- 2004
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- electron solid interactions, spectroscopy, synchrotron radiation photoelectron, molecular beam epitaxy, gallium arsenide
- host publication
- Proceedings of the 22nd European Conference on Surface Science (Surface Science)
- volume
- 566
- pages
- 1196 - 1199
- publisher
- Elsevier
- conference name
- 22nd European Conference on Surface Science
- conference location
- Prague, Czech Republic
- conference dates
- 2003-09-07 - 2003-09-12
- external identifiers
-
- wos:000224238300097
- scopus:4544309599
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2004.06.088
- language
- English
- LU publication?
- yes
- id
- ce6e59ac-0580-4192-a2b2-04b8f2ecad5f (old id 264204)
- date added to LUP
- 2016-04-01 16:40:30
- date last changed
- 2022-01-28 21:17:46
@inproceedings{ce6e59ac-0580-4192-a2b2-04b8f2ecad5f, abstract = {{Electron mean free path (MFP) was determined by the angular resolved photoemission in 10-40 eV energy range for GaAs(100)-c(4 x 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(100). (C) 2004 Elsevier B.V. All rights reserved.}}, author = {{Jiricek, P and Cukr, M and Bartos, I and Sadowski, Janusz}}, booktitle = {{Proceedings of the 22nd European Conference on Surface Science (Surface Science)}}, issn = {{0039-6028}}, keywords = {{electron solid interactions; spectroscopy; synchrotron radiation photoelectron; molecular beam epitaxy; gallium arsenide}}, language = {{eng}}, pages = {{1196--1199}}, publisher = {{Elsevier}}, title = {{Electron mean free path for GaAs(100)-c(4x4) at very low energies}}, url = {{http://dx.doi.org/10.1016/j.susc.2004.06.088}}, doi = {{10.1016/j.susc.2004.06.088}}, volume = {{566}}, year = {{2004}}, }