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Nanoelectronic pulse generators based on gated resonant tunnelling diodes

Wernersson, Lars-Erik LU ; Lindström, Peter LU ; Nauen, André LU and Lind, Erik LU (2004) In International Journal of Circuit Theory and Applications 32(5). p.431-437
Abstract
We study the operation of a gated resonant tunnel diode placed in an oscillator tank circuit for application as a pulse generator. The gated diode is realized by a metal gate placed 30nm away from a resonant tunnelling double barrier heterostructure, where the gate is used to control the current of the tunnelling diode. A large signal model is developed for the gated resonant tunnelling diode and we use this model to study the operation of the pulsed oscillator. It is demonstrated that the gate can be used to switch the oscillations on and off and to tune the oscillation frequency via changes in the internal capacitances in the gated diode. A modulation in the oscillation frequency of 7.6 GHz around 220 GHz is obtained for a change in the... (More)
We study the operation of a gated resonant tunnel diode placed in an oscillator tank circuit for application as a pulse generator. The gated diode is realized by a metal gate placed 30nm away from a resonant tunnelling double barrier heterostructure, where the gate is used to control the current of the tunnelling diode. A large signal model is developed for the gated resonant tunnelling diode and we use this model to study the operation of the pulsed oscillator. It is demonstrated that the gate can be used to switch the oscillations on and off and to tune the oscillation frequency via changes in the internal capacitances in the gated diode. A modulation in the oscillation frequency of 7.6 GHz around 220 GHz is obtained for a change in the gate bias from 0.2 to -0.6 V. Short pulses applied to the gate results in only four periods of oscillation with a broad power spectrum. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
oscillator, resonant tunnelling diode, resonant tunnelling transistor, voltage-controlled oscillator
in
International Journal of Circuit Theory and Applications
volume
32
issue
5
pages
431 - 437
publisher
John Wiley & Sons
external identifiers
  • wos:000224212700010
  • scopus:4744372031
ISSN
1097-007X
DOI
10.1002/cta.290
language
English
LU publication?
yes
id
3147fbf6-90b5-461e-9671-7641424d250a (old id 265400)
date added to LUP
2007-11-05 13:35:34
date last changed
2017-01-01 04:29:50
@article{3147fbf6-90b5-461e-9671-7641424d250a,
  abstract     = {We study the operation of a gated resonant tunnel diode placed in an oscillator tank circuit for application as a pulse generator. The gated diode is realized by a metal gate placed 30nm away from a resonant tunnelling double barrier heterostructure, where the gate is used to control the current of the tunnelling diode. A large signal model is developed for the gated resonant tunnelling diode and we use this model to study the operation of the pulsed oscillator. It is demonstrated that the gate can be used to switch the oscillations on and off and to tune the oscillation frequency via changes in the internal capacitances in the gated diode. A modulation in the oscillation frequency of 7.6 GHz around 220 GHz is obtained for a change in the gate bias from 0.2 to -0.6 V. Short pulses applied to the gate results in only four periods of oscillation with a broad power spectrum.},
  author       = {Wernersson, Lars-Erik and Lindström, Peter and Nauen, André and Lind, Erik},
  issn         = {1097-007X},
  keyword      = {oscillator,resonant tunnelling diode,resonant tunnelling transistor,voltage-controlled oscillator},
  language     = {eng},
  number       = {5},
  pages        = {431--437},
  publisher    = {John Wiley & Sons},
  series       = {International Journal of Circuit Theory and Applications},
  title        = {Nanoelectronic pulse generators based on gated resonant tunnelling diodes},
  url          = {http://dx.doi.org/10.1002/cta.290},
  volume       = {32},
  year         = {2004},
}