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Ga sublattice defects in (Ga,Mn)As: Thermodynamical and kinetic trends

Tuomisto, F; Pennanen, K; Saarinen, K and Sadowski, Janusz LU (2004) In Physical Review Letters 93(5).
Abstract
We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1-xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite concentration increases with increasing Mn content. This is in agreement with thermodynamical considerations for the electronic part of the formation energy of the Ga sublattice point defects. However, the absolute defect concentrations imply that they are determined rather by the growth kinetics than by the thermodynamical equilibrium. The As antisite concentrations in the samples are large enough to be important for compensation and magnetic properites. In addition, the Ga vacancies are... (More)
We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1-xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite concentration increases with increasing Mn content. This is in agreement with thermodynamical considerations for the electronic part of the formation energy of the Ga sublattice point defects. However, the absolute defect concentrations imply that they are determined rather by the growth kinetics than by the thermodynamical equilibrium. The As antisite concentrations in the samples are large enough to be important for compensation and magnetic properites. In addition, the Ga vacancies are likely to be involved in the diffusion and clustering of Mn at low annealing temperatures. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Letters
volume
93
issue
5
publisher
American Physical Society
external identifiers
  • wos:000222996800033
  • scopus:69349107091
ISSN
1079-7114
DOI
10.1103/PhysRevLett.93.055505
language
English
LU publication?
yes
id
8877f5e4-4d6a-402d-9328-9b203faa17d9 (old id 271626)
date added to LUP
2007-11-03 10:47:47
date last changed
2017-03-12 03:25:33
@article{8877f5e4-4d6a-402d-9328-9b203faa17d9,
  abstract     = {We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1-xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite concentration increases with increasing Mn content. This is in agreement with thermodynamical considerations for the electronic part of the formation energy of the Ga sublattice point defects. However, the absolute defect concentrations imply that they are determined rather by the growth kinetics than by the thermodynamical equilibrium. The As antisite concentrations in the samples are large enough to be important for compensation and magnetic properites. In addition, the Ga vacancies are likely to be involved in the diffusion and clustering of Mn at low annealing temperatures.},
  author       = {Tuomisto, F and Pennanen, K and Saarinen, K and Sadowski, Janusz},
  issn         = {1079-7114},
  language     = {eng},
  number       = {5},
  publisher    = {American Physical Society},
  series       = {Physical Review Letters},
  title        = {Ga sublattice defects in (Ga,Mn)As: Thermodynamical and kinetic trends},
  url          = {http://dx.doi.org/10.1103/PhysRevLett.93.055505},
  volume       = {93},
  year         = {2004},
}