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Laser lithography on resist bi-layer for nanoelectromechanical systems prototyping

Forsen, E; Carlberg, Patrick LU ; Montelius, Lars LU and Boisen, A (2004) In Microelectronic Engineering 73-74. p.491-495
Abstract
We present a laser lithography technique based on lift-off, for fast and flexible prototyping of micro and nanoelectromechanical systems (MEMS/NEMS). The technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of polymethyl methacrylate (PMMA) on lift-off resist (LOR). Laser writing melts and evaporates the PMMA exposing the LOR. Oxygen ashing removes PMMA residues within the lithography pattern. A resist solvent is used to transfer the pattern down to the substrate. The LOR is dissolved isotropically while the PMMA is unaffected by the solvent, hence creating an undercut profile. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface. First, warm... (More)
We present a laser lithography technique based on lift-off, for fast and flexible prototyping of micro and nanoelectromechanical systems (MEMS/NEMS). The technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of polymethyl methacrylate (PMMA) on lift-off resist (LOR). Laser writing melts and evaporates the PMMA exposing the LOR. Oxygen ashing removes PMMA residues within the lithography pattern. A resist solvent is used to transfer the pattern down to the substrate. The LOR is dissolved isotropically while the PMMA is unaffected by the solvent, hence creating an undercut profile. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface. First, warm acetone dissolves the PMMA and lifts off the metal layer, then warm Remover PG removes the LOR and any remaining metal. Metal structures with line widths down to 600 nm and dots with 600 mn diameters are presented. (C) 2004 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
rapid prototyping, direct write, nanoeletromechanical systems, laser lithography, resist bi-layer
in
Microelectronic Engineering
volume
73-74
pages
491 - 495
publisher
Elsevier
external identifiers
  • wos:000222145400087
  • scopus:2542493502
ISSN
1873-5568
DOI
10.1016/j.mee.2004.03.023
language
English
LU publication?
yes
id
065b67a1-a749-466c-a9f4-755711751db1 (old id 274495)
date added to LUP
2008-01-16 11:35:49
date last changed
2017-01-01 04:20:23
@article{065b67a1-a749-466c-a9f4-755711751db1,
  abstract     = {We present a laser lithography technique based on lift-off, for fast and flexible prototyping of micro and nanoelectromechanical systems (MEMS/NEMS). The technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of polymethyl methacrylate (PMMA) on lift-off resist (LOR). Laser writing melts and evaporates the PMMA exposing the LOR. Oxygen ashing removes PMMA residues within the lithography pattern. A resist solvent is used to transfer the pattern down to the substrate. The LOR is dissolved isotropically while the PMMA is unaffected by the solvent, hence creating an undercut profile. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface. First, warm acetone dissolves the PMMA and lifts off the metal layer, then warm Remover PG removes the LOR and any remaining metal. Metal structures with line widths down to 600 nm and dots with 600 mn diameters are presented. (C) 2004 Elsevier B.V. All rights reserved.},
  author       = {Forsen, E and Carlberg, Patrick and Montelius, Lars and Boisen, A},
  issn         = {1873-5568},
  keyword      = {rapid prototyping,direct write,nanoeletromechanical systems,laser lithography,resist bi-layer},
  language     = {eng},
  pages        = {491--495},
  publisher    = {Elsevier},
  series       = {Microelectronic Engineering},
  title        = {Laser lithography on resist bi-layer for nanoelectromechanical systems prototyping},
  url          = {http://dx.doi.org/10.1016/j.mee.2004.03.023},
  volume       = {73-74},
  year         = {2004},
}