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Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques

Landin, L; Pettersson, H; Kleverman, Mats LU ; Borgström, Magnus LU ; Zhang, X; Seifert, Werner LU and Samuelson, Lars LU (2004) In Applied Physics Reviews 95(12). p.8007-8010
Abstract
We report on a detailed investigation of the interband optics of self-assembled InAs dots embedded in a matrix of InP. In photoconductivity (PC) measurements, we observe optical processes related to the dots and a wetting layer, band-to-band excitation of the InP barrier, as well as to an interesting As-related impurity. In particular, the PC measurements reveal the electronic structure of the dots and strongly suggest that an Auger effect is involved in forming the PC signal. Comparing the PC and photoluminescence (PL) signals, we observe that the fundamental transition is not observed in PC, which we interpret in terms of Pauli blocking due to electrons populating the ground state of the dots. In general, it is demonstrated that the PC... (More)
We report on a detailed investigation of the interband optics of self-assembled InAs dots embedded in a matrix of InP. In photoconductivity (PC) measurements, we observe optical processes related to the dots and a wetting layer, band-to-band excitation of the InP barrier, as well as to an interesting As-related impurity. In particular, the PC measurements reveal the electronic structure of the dots and strongly suggest that an Auger effect is involved in forming the PC signal. Comparing the PC and photoluminescence (PL) signals, we observe that the fundamental transition is not observed in PC, which we interpret in terms of Pauli blocking due to electrons populating the ground state of the dots. In general, it is demonstrated that the PC technique is in many respects complementary to PL and gives additional insight into the electronic structure of quantum dots. (C) 2004 American Institute of Physics. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
95
issue
12
pages
8007 - 8010
publisher
American Institute of Physics
external identifiers
  • wos:000221843400067
  • scopus:3142601525
ISSN
0021-8979
DOI
10.1063/1.1627947
language
English
LU publication?
yes
id
71ee465b-5179-439c-adb3-8902cfeb46fc (old id 276213)
date added to LUP
2007-10-24 08:00:28
date last changed
2017-01-01 04:53:11
@article{71ee465b-5179-439c-adb3-8902cfeb46fc,
  abstract     = {We report on a detailed investigation of the interband optics of self-assembled InAs dots embedded in a matrix of InP. In photoconductivity (PC) measurements, we observe optical processes related to the dots and a wetting layer, band-to-band excitation of the InP barrier, as well as to an interesting As-related impurity. In particular, the PC measurements reveal the electronic structure of the dots and strongly suggest that an Auger effect is involved in forming the PC signal. Comparing the PC and photoluminescence (PL) signals, we observe that the fundamental transition is not observed in PC, which we interpret in terms of Pauli blocking due to electrons populating the ground state of the dots. In general, it is demonstrated that the PC technique is in many respects complementary to PL and gives additional insight into the electronic structure of quantum dots. (C) 2004 American Institute of Physics.},
  author       = {Landin, L and Pettersson, H and Kleverman, Mats and Borgström, Magnus and Zhang, X and Seifert, Werner and Samuelson, Lars},
  issn         = {0021-8979},
  language     = {eng},
  number       = {12},
  pages        = {8007--8010},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Interband transitions in InAs quantum dots in InP studied by photoconductivity and photoluminescence techniques},
  url          = {http://dx.doi.org/10.1063/1.1627947},
  volume       = {95},
  year         = {2004},
}