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Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry

Song, AM; Maximov, Ivan LU ; Missous, M and Seifert, Werner LU (2004) Eleventh International Conference on Modulated Semiconductor Structures In Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures) 21(2-4). p.1116-1120
Abstract
We present a new type of nanometer-scale semiconductor nonlinear device, called self-switching device (SSD). The device was realized by simply etching insulating grooves into a semiconductor, between which a narrow channel with a broken symmetry was formed. Because of the asymmetry in the channel boundary, an applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a diode-like current-voltage characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually 0 to more than 10 V by simply adjusting the channel width. Furthermore, only... (More)
We present a new type of nanometer-scale semiconductor nonlinear device, called self-switching device (SSD). The device was realized by simply etching insulating grooves into a semiconductor, between which a narrow channel with a broken symmetry was formed. Because of the asymmetry in the channel boundary, an applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a diode-like current-voltage characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually 0 to more than 10 V by simply adjusting the channel width. Furthermore, only one lithography step was needed to fabricate SSDs. We used two different material systems, InGaAs-InP and InGaAs-InAlAs, to realize SSDs and the results at room temperature were compared. We also show that by adding a third terminal to an SSD as a gate, the turn-on voltage of the device could be tuned by the gate bias and the device functions either as a tunable diode or as a transistor. (C) 2003 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
InGaAs-InAlAs, nonlinear, nanodevice, symmetry, InGaAs-InP
in
Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)
volume
21
issue
2-4
pages
1116 - 1120
publisher
Elsevier
conference name
Eleventh International Conference on Modulated Semiconductor Structures
external identifiers
  • wos:000220873300200
  • scopus:1642352582
ISSN
1386-9477
DOI
10.1016/j.physe.2003.11.190
language
English
LU publication?
yes
id
d5b8977c-a84f-4d7b-813f-6643e62d00f3 (old id 280649)
date added to LUP
2007-11-02 08:38:20
date last changed
2017-12-10 04:27:59
@inproceedings{d5b8977c-a84f-4d7b-813f-6643e62d00f3,
  abstract     = {We present a new type of nanometer-scale semiconductor nonlinear device, called self-switching device (SSD). The device was realized by simply etching insulating grooves into a semiconductor, between which a narrow channel with a broken symmetry was formed. Because of the asymmetry in the channel boundary, an applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a diode-like current-voltage characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually 0 to more than 10 V by simply adjusting the channel width. Furthermore, only one lithography step was needed to fabricate SSDs. We used two different material systems, InGaAs-InP and InGaAs-InAlAs, to realize SSDs and the results at room temperature were compared. We also show that by adding a third terminal to an SSD as a gate, the turn-on voltage of the device could be tuned by the gate bias and the device functions either as a tunable diode or as a transistor. (C) 2003 Elsevier B.V. All rights reserved.},
  author       = {Song, AM and Maximov, Ivan and Missous, M and Seifert, Werner},
  booktitle    = {Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)},
  issn         = {1386-9477},
  keyword      = {InGaAs-InAlAs,nonlinear,nanodevice,symmetry,InGaAs-InP},
  language     = {eng},
  number       = {2-4},
  pages        = {1116--1120},
  publisher    = {Elsevier},
  title        = {Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry},
  url          = {http://dx.doi.org/10.1016/j.physe.2003.11.190},
  volume       = {21},
  year         = {2004},
}