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Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect

Dick Thelander, Kimberly LU ; Bolinsson, Jessica LU ; Borg, Mattias LU and Johansson, Jonas LU (2012) In Nano Letters 12(6). p.3200-3206
Abstract
Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally attributed to the dissolution of growth species in the common alloy seed particles. Although progress has been made for some material systems, most binary material combinations remain problematic due to the interaction of growth species in the alloy. In this work we investigate the formation of interfaces in InAs-GaAs heterostructures experimentally and theoretically and demonstrate a technique to attain substantially sharper interfaces. We show that by pulsing the Ga source during... (More)
Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally attributed to the dissolution of growth species in the common alloy seed particles. Although progress has been made for some material systems, most binary material combinations remain problematic due to the interaction of growth species in the alloy. In this work we investigate the formation of interfaces in InAs-GaAs heterostructures experimentally and theoretically and demonstrate a technique to attain substantially sharper interfaces. We show that by pulsing the Ga source during heterojunction formation, In is pushed out before GaAs growth initiates, greatly reducing In carry-over. This procedure will be directly applicable to any nanowire system with finite nonideal solubility of growth species in the alloy seed particle and greatly improve the applicability of these structures in future devices. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowire, heterostructure, III-V semiconductor, MOVPE, XEDS
in
Nano Letters
volume
12
issue
6
pages
3200 - 3206
publisher
The American Chemical Society
external identifiers
  • wos:000305106400091
  • scopus:84862285908
ISSN
1530-6992
DOI
10.1021/nl301185x
language
English
LU publication?
yes
id
326d3d9d-e9ef-4d6c-9c26-52b58d4efe04 (old id 2892351)
date added to LUP
2012-07-26 10:11:07
date last changed
2017-11-19 03:41:28
@article{326d3d9d-e9ef-4d6c-9c26-52b58d4efe04,
  abstract     = {Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally attributed to the dissolution of growth species in the common alloy seed particles. Although progress has been made for some material systems, most binary material combinations remain problematic due to the interaction of growth species in the alloy. In this work we investigate the formation of interfaces in InAs-GaAs heterostructures experimentally and theoretically and demonstrate a technique to attain substantially sharper interfaces. We show that by pulsing the Ga source during heterojunction formation, In is pushed out before GaAs growth initiates, greatly reducing In carry-over. This procedure will be directly applicable to any nanowire system with finite nonideal solubility of growth species in the alloy seed particle and greatly improve the applicability of these structures in future devices.},
  author       = {Dick Thelander, Kimberly and Bolinsson, Jessica and Borg, Mattias and Johansson, Jonas},
  issn         = {1530-6992},
  keyword      = {Nanowire,heterostructure,III-V semiconductor,MOVPE,XEDS},
  language     = {eng},
  number       = {6},
  pages        = {3200--3206},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect},
  url          = {http://dx.doi.org/10.1021/nl301185x},
  volume       = {12},
  year         = {2012},
}