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Electric field effects in single semiconductor quantum dots observed by scanning tunneling luminescence

Håkanson, Ulf LU ; Hakanson, H; Johansson, Mikael LU ; Samuelson, Lars LU and Pistol, Mats-Erik LU (2003) In Journal of Vacuum Science and Technology B 21(6). p.2344-2347
Abstract
Scanning tunneling microscopy (STM) and scanning tunneling luminescence were used to correlate the topography with the emission spectra from individual self-assembled, InP quantum dots (QDs). We have investigated in detail how the electric field induced by the STM tip affects the emission from the QDs. This was done when exciting a QD, by altering the bias for constant current, by altering the current for constant bias, or by changing the tip position. An increased bias (increased electric field) leads to Stark shift of the QD emission, whereas a larger tunneling current results in state filling of the emission. Furthermore, when exciting the QD, the position of the STM tip is shown to have large effects on the QD luminescence.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Vacuum Science and Technology B
volume
21
issue
6
pages
2344 - 2347
publisher
American Institute of Physics
external identifiers
  • wos:000188193600012
  • scopus:0942267569
ISSN
1520-8567
DOI
language
English
LU publication?
yes
id
f9a29146-b9ae-4db5-abab-69a39e8aff1f (old id 289667)
date added to LUP
2007-09-03 14:00:03
date last changed
2018-05-29 12:11:32
@article{f9a29146-b9ae-4db5-abab-69a39e8aff1f,
  abstract     = {Scanning tunneling microscopy (STM) and scanning tunneling luminescence were used to correlate the topography with the emission spectra from individual self-assembled, InP quantum dots (QDs). We have investigated in detail how the electric field induced by the STM tip affects the emission from the QDs. This was done when exciting a QD, by altering the bias for constant current, by altering the current for constant bias, or by changing the tip position. An increased bias (increased electric field) leads to Stark shift of the QD emission, whereas a larger tunneling current results in state filling of the emission. Furthermore, when exciting the QD, the position of the STM tip is shown to have large effects on the QD luminescence.},
  author       = {Håkanson, Ulf and Hakanson, H and Johansson, Mikael and Samuelson, Lars and Pistol, Mats-Erik},
  issn         = {1520-8567},
  language     = {eng},
  number       = {6},
  pages        = {2344--2347},
  publisher    = {American Institute of Physics},
  series       = {Journal of Vacuum Science and Technology B},
  title        = {Electric field effects in single semiconductor quantum dots observed by scanning tunneling luminescence},
  url          = {http://dx.doi.org/},
  volume       = {21},
  year         = {2003},
}