Advanced

SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

Wernersson, Lars-Erik LU ; Kabeer, S; Zela, V; Lind, Erik LU ; Zhang, J; Seifert, Werner LU ; Kosel, T and Seabaugh, A (2004) In Electronics Letters 40(1). p.83-85
Abstract
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Electronics Letters
volume
40
issue
1
pages
83 - 85
publisher
IEE
external identifiers
  • wos:000188172300054
  • scopus:0347130073
ISSN
1350-911X
DOI
10.1049/el:20040048
language
English
LU publication?
yes
id
04267dad-b349-48c1-a611-b4372f2689aa (old id 289785)
date added to LUP
2007-11-05 13:45:57
date last changed
2017-01-01 06:59:06
@article{04267dad-b349-48c1-a611-b4372f2689aa,
  abstract     = {A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.},
  author       = {Wernersson, Lars-Erik and Kabeer, S and Zela, V and Lind, Erik and Zhang, J and Seifert, Werner and Kosel, T and Seabaugh, A},
  issn         = {1350-911X},
  language     = {eng},
  number       = {1},
  pages        = {83--85},
  publisher    = {IEE},
  series       = {Electronics Letters},
  title        = {SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion},
  url          = {http://dx.doi.org/10.1049/el:20040048},
  volume       = {40},
  year         = {2004},
}