SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
(2004) In Electronics Letters 40(1). p.83-85- Abstract
- A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/289785
- author
- Wernersson, Lars-Erik LU ; Kabeer, S ; Zela, V ; Lind, Erik LU ; Zhang, J ; Seifert, Werner LU ; Kosel, T and Seabaugh, A
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Electronics Letters
- volume
- 40
- issue
- 1
- pages
- 83 - 85
- publisher
- IEE
- external identifiers
-
- wos:000188172300054
- scopus:0347130073
- ISSN
- 1350-911X
- DOI
- 10.1049/el:20040048
- language
- English
- LU publication?
- yes
- id
- 04267dad-b349-48c1-a611-b4372f2689aa (old id 289785)
- date added to LUP
- 2016-04-01 16:13:04
- date last changed
- 2024-02-26 14:28:09
@article{04267dad-b349-48c1-a611-b4372f2689aa, abstract = {{A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.}}, author = {{Wernersson, Lars-Erik and Kabeer, S and Zela, V and Lind, Erik and Zhang, J and Seifert, Werner and Kosel, T and Seabaugh, A}}, issn = {{1350-911X}}, language = {{eng}}, number = {{1}}, pages = {{83--85}}, publisher = {{IEE}}, series = {{Electronics Letters}}, title = {{SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion}}, url = {{http://dx.doi.org/10.1049/el:20040048}}, doi = {{10.1049/el:20040048}}, volume = {{40}}, year = {{2004}}, }