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InP hot electron transistors with a buried metal gate

Miyamoto, Y; Yamamoto, R; Maeda, H; Takeuchi, K; Machida, N; Wernersson, Lars-Erik LU and Furuya, K (2003) In Japanese Journal of Applied Physics 42(12). p.7221-7226
Abstract
To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices... (More)
To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
hot electron transistors, buried metal gate, ballistic electron, InP
in
Japanese Journal of Applied Physics
volume
42
issue
12
pages
7221 - 7226
publisher
Japan Society of Applied Physics
external identifiers
  • wos:000187559600011
  • scopus:1242265326
ISSN
0021-4922
DOI
10.1143/JJAP.42.7221
language
English
LU publication?
yes
id
bfc94779-c2eb-4794-9406-e441589efb91 (old id 291427)
date added to LUP
2007-09-18 12:48:45
date last changed
2018-10-03 10:48:23
@article{bfc94779-c2eb-4794-9406-e441589efb91,
  abstract     = {To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated.},
  author       = {Miyamoto, Y and Yamamoto, R and Maeda, H and Takeuchi, K and Machida, N and Wernersson, Lars-Erik and Furuya, K},
  issn         = {0021-4922},
  keyword      = {hot electron transistors,buried metal gate,ballistic electron,InP},
  language     = {eng},
  number       = {12},
  pages        = {7221--7226},
  publisher    = {Japan Society of Applied Physics},
  series       = {Japanese Journal of Applied Physics},
  title        = {InP hot electron transistors with a buried metal gate},
  url          = {http://dx.doi.org/10.1143/JJAP.42.7221},
  volume       = {42},
  year         = {2003},
}