InP hot electron transistors with a buried metal gate
(2003) In Japanese Journal of Applied Physics 42(12). p.7221-7226- Abstract
- To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices... (More)
- To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/291427
- author
- Miyamoto, Y ; Yamamoto, R ; Maeda, H ; Takeuchi, K ; Machida, N ; Wernersson, Lars-Erik LU and Furuya, K
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- hot electron transistors, buried metal gate, ballistic electron, InP
- in
- Japanese Journal of Applied Physics
- volume
- 42
- issue
- 12
- pages
- 7221 - 7226
- publisher
- IOP Publishing
- external identifiers
-
- wos:000187559600011
- scopus:1242265326
- ISSN
- 0021-4922
- DOI
- 10.1143/JJAP.42.7221
- language
- English
- LU publication?
- yes
- id
- bfc94779-c2eb-4794-9406-e441589efb91 (old id 291427)
- date added to LUP
- 2016-04-01 11:52:06
- date last changed
- 2022-01-26 19:26:05
@article{bfc94779-c2eb-4794-9406-e441589efb91, abstract = {{To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage cur-rent, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated.}}, author = {{Miyamoto, Y and Yamamoto, R and Maeda, H and Takeuchi, K and Machida, N and Wernersson, Lars-Erik and Furuya, K}}, issn = {{0021-4922}}, keywords = {{hot electron transistors; buried metal gate; ballistic electron; InP}}, language = {{eng}}, number = {{12}}, pages = {{7221--7226}}, publisher = {{IOP Publishing}}, series = {{Japanese Journal of Applied Physics}}, title = {{InP hot electron transistors with a buried metal gate}}, url = {{http://dx.doi.org/10.1143/JJAP.42.7221}}, doi = {{10.1143/JJAP.42.7221}}, volume = {{42}}, year = {{2003}}, }