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Magnetization of ultrathin (Ga,Mn)As layers

Mathieu, R; Sorensen, BS; Sadowski, Janusz LU ; Sodervall, U; Kanski, J; Svedlindh, P; Lindelof, PE; Hrabovsky, D and Vanelle, E (2003) In Physical Review B (Condensed Matter and Materials Physics) 68(18: 184421).
Abstract
Kerr rotation and superconducting quantum interference device magnetometry measurements were performed on ultrathin (Ga0.95Mn0.05)As layers. The thinner layers (below 250 A) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 A) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary ion mass spectrometry experiments on similar layers show that Mn is displaced upon annealing. The results are... (More)
Kerr rotation and superconducting quantum interference device magnetometry measurements were performed on ultrathin (Ga0.95Mn0.05)As layers. The thinner layers (below 250 A) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 A) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary ion mass spectrometry experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
68
issue
18: 184421
publisher
American Physical Society
external identifiers
  • wos:000187004300059
  • scopus:0347064221
ISSN
1098-0121
DOI
language
English
LU publication?
yes
id
63258dde-06cb-4b00-8179-8c7477fa2e19 (old id 293675)
date added to LUP
2007-09-18 08:29:41
date last changed
2018-05-29 11:13:33
@article{63258dde-06cb-4b00-8179-8c7477fa2e19,
  abstract     = {Kerr rotation and superconducting quantum interference device magnetometry measurements were performed on ultrathin (Ga0.95Mn0.05)As layers. The thinner layers (below 250 A) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 A) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary ion mass spectrometry experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers.},
  author       = {Mathieu, R and Sorensen, BS and Sadowski, Janusz and Sodervall, U and Kanski, J and Svedlindh, P and Lindelof, PE and Hrabovsky, D and Vanelle, E},
  issn         = {1098-0121},
  language     = {eng},
  number       = {18: 184421},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Magnetization of ultrathin (Ga,Mn)As layers},
  url          = {http://dx.doi.org/},
  volume       = {68},
  year         = {2003},
}