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Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces

Borgström, Magnus LU ; Samuelson, Lars LU ; Seifert, Werner LU ; Mikkelsen, Anders LU ; Ouattara, Lassana LU and Lundgren, Edvin LU (2003) In Applied Physics Letters 83(23). p.4830-4832
Abstract
We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
23
pages
4830 - 4832
publisher
American Institute of Physics
external identifiers
  • wos:000186970200048
  • scopus:0348197035
ISSN
0003-6951
DOI
10.1063/1.1632542
language
English
LU publication?
yes
id
68337b13-cb40-442e-b668-e8ba34b9fb49 (old id 293958)
date added to LUP
2007-08-24 15:25:12
date last changed
2018-01-07 06:10:05
@article{68337b13-cb40-442e-b668-e8ba34b9fb49,
  abstract     = {We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.},
  author       = {Borgström, Magnus and Samuelson, Lars and Seifert, Werner and Mikkelsen, Anders and Ouattara, Lassana and Lundgren, Edvin},
  issn         = {0003-6951},
  language     = {eng},
  number       = {23},
  pages        = {4830--4832},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces},
  url          = {http://dx.doi.org/10.1063/1.1632542},
  volume       = {83},
  year         = {2003},
}