Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces
(2003) In Applied Physics Letters 83(23). p.4830-4832- Abstract
- We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/293958
- author
- Borgström, Magnus LU ; Samuelson, Lars LU ; Seifert, Werner LU ; Mikkelsen, Anders LU ; Ouattara, Lassana LU and Lundgren, Edvin LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 83
- issue
- 23
- pages
- 4830 - 4832
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000186970200048
- scopus:0348197035
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1632542
- language
- English
- LU publication?
- yes
- id
- 68337b13-cb40-442e-b668-e8ba34b9fb49 (old id 293958)
- date added to LUP
- 2016-04-01 12:24:27
- date last changed
- 2022-01-27 03:16:29
@article{68337b13-cb40-442e-b668-e8ba34b9fb49, abstract = {{We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of dots, three dots were often found in the stacks. The third dot formed immediately on top of the final InP layer, at the InP/GaInAs interface. Atomically resolved images of these spontaneously formed dots indicate that they also consist of pure InAs. The effect is discussed in terms of phase segregation of GaInAs and arsenic-phosphorus exchange reactions. (C) 2003 American Institute of Physics.}}, author = {{Borgström, Magnus and Samuelson, Lars and Seifert, Werner and Mikkelsen, Anders and Ouattara, Lassana and Lundgren, Edvin}}, issn = {{0003-6951}}, language = {{eng}}, number = {{23}}, pages = {{4830--4832}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces}}, url = {{http://dx.doi.org/10.1063/1.1632542}}, doi = {{10.1063/1.1632542}}, volume = {{83}}, year = {{2003}}, }