Advanced

Quadruples of Ge dots grown on patterned Si surfaces

Borgström, Magnus LU ; Zela, Vilma LU and Seifert, Werner LU (2003) In Journal of Crystal Growth 259(3). p.262-266
Abstract
In this paper, we present the results of Ge deposition on a pre-pattemed Si surface. By partially overgrowing nanometer-sized electron beam-induced carbon deposits, faceted pits form at the Si surface and well-defined arrays of self-assembled Ge dots can be grown site selectively in and around those. Typically, four closely spaced Ge islands are formed by preferential nucleation around the pits. By varying the pattern of C-deposits a manifold of different arrays can be obtained. (C) 2003 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
chemical vapor deposition processes, nanostructures, nucleation
in
Journal of Crystal Growth
volume
259
issue
3
pages
262 - 266
publisher
Elsevier
external identifiers
  • wos:000186283500007
  • scopus:0142063395
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2003.07.020
language
English
LU publication?
yes
id
2cfd4a61-1247-41b4-9225-a47fd86b81a4 (old id 296460)
date added to LUP
2007-08-24 15:27:42
date last changed
2018-01-07 09:03:22
@article{2cfd4a61-1247-41b4-9225-a47fd86b81a4,
  abstract     = {In this paper, we present the results of Ge deposition on a pre-pattemed Si surface. By partially overgrowing nanometer-sized electron beam-induced carbon deposits, faceted pits form at the Si surface and well-defined arrays of self-assembled Ge dots can be grown site selectively in and around those. Typically, four closely spaced Ge islands are formed by preferential nucleation around the pits. By varying the pattern of C-deposits a manifold of different arrays can be obtained. (C) 2003 Elsevier B.V. All rights reserved.},
  author       = {Borgström, Magnus and Zela, Vilma and Seifert, Werner},
  issn         = {0022-0248},
  keyword      = {chemical vapor deposition processes,nanostructures,nucleation},
  language     = {eng},
  number       = {3},
  pages        = {262--266},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Quadruples of Ge dots grown on patterned Si surfaces},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2003.07.020},
  volume       = {259},
  year         = {2003},
}