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Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study

Downes, JE; Smith, KE; Matsuura, AY; Lindau, Ingolf LU ; Iliopoulos, E and Moustakas, TD (2003) In Applied Physics Reviews 94(9). p.5820-5825
Abstract
The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In0.12Ga0.88N have been studied using scanning photoemission microscopy. No phase separation of the material is observed for annealing temperatures up to 650degreesC. However, samples annealed at 700degreesC for 5 h show clear evidence of phase separation. Furthermore, annealing at these temperatures with the sample surface directly exposed to ultrahigh vacuum produces a surface greatly deficient in In and with considerable surface roughness. This can be circumvented by using a sacrificial sample in physical contact with the film to artificially increase the local vapor pressure of Ga, In, and N during... (More)
The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In0.12Ga0.88N have been studied using scanning photoemission microscopy. No phase separation of the material is observed for annealing temperatures up to 650degreesC. However, samples annealed at 700degreesC for 5 h show clear evidence of phase separation. Furthermore, annealing at these temperatures with the sample surface directly exposed to ultrahigh vacuum produces a surface greatly deficient in In and with considerable surface roughness. This can be circumvented by using a sacrificial sample in physical contact with the film to artificially increase the local vapor pressure of Ga, In, and N during annealing. (C) 2003 American Institute of Physics. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
94
issue
9
pages
5820 - 5825
publisher
American Institute of Physics
external identifiers
  • wos:000186138600056
  • scopus:0242636852
ISSN
0021-8979
DOI
10.1063/1.1617356
language
English
LU publication?
yes
id
4ea5f08b-bd4e-4ff8-b536-971a18389393 (old id 297924)
date added to LUP
2007-08-29 12:20:11
date last changed
2017-07-09 03:32:03
@article{4ea5f08b-bd4e-4ff8-b536-971a18389393,
  abstract     = {The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In0.12Ga0.88N have been studied using scanning photoemission microscopy. No phase separation of the material is observed for annealing temperatures up to 650degreesC. However, samples annealed at 700degreesC for 5 h show clear evidence of phase separation. Furthermore, annealing at these temperatures with the sample surface directly exposed to ultrahigh vacuum produces a surface greatly deficient in In and with considerable surface roughness. This can be circumvented by using a sacrificial sample in physical contact with the film to artificially increase the local vapor pressure of Ga, In, and N during annealing. (C) 2003 American Institute of Physics.},
  author       = {Downes, JE and Smith, KE and Matsuura, AY and Lindau, Ingolf and Iliopoulos, E and Moustakas, TD},
  issn         = {0021-8979},
  language     = {eng},
  number       = {9},
  pages        = {5820--5825},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study},
  url          = {http://dx.doi.org/10.1063/1.1617356},
  volume       = {94},
  year         = {2003},
}