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Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots

Johansson, Mikael LU ; Håkanson, Ulf LU ; Holm, Magnus LU ; Persson, Jonas LU ; Sass, T; Johansson, Jonas LU ; Pryor, C; Montelius, Lars LU ; Seifert, Werner LU and Samuelson, Lars LU , et al. (2003) In Physical Review B (Condensed Matter and Materials Physics) 68(12).
Abstract
We have studied the early stages of GaInP overgrowth on InP quantum dots (QD's) experimentally and theoretically. A direct correlation between the surface morphology and the optical properties of individual InP QD's is made using scanning tunneling microscopy (STM) and scanning tunneling luminescence. The geometric structure of the islands is further investigated using cross-sectional transmission electron microscopy (TEM). The overgrowth occurs in three stages; initially the InP QD's act as seeding points for the overgrowth, where the GaInP grows laterally from the side facets of the QD. The growth occurs preferentially in the [110] direction and elongated GaInP/InP islands are formed. As the overgrowth continues the islands increase... (More)
We have studied the early stages of GaInP overgrowth on InP quantum dots (QD's) experimentally and theoretically. A direct correlation between the surface morphology and the optical properties of individual InP QD's is made using scanning tunneling microscopy (STM) and scanning tunneling luminescence. The geometric structure of the islands is further investigated using cross-sectional transmission electron microscopy (TEM). The overgrowth occurs in three stages; initially the InP QD's act as seeding points for the overgrowth, where the GaInP grows laterally from the side facets of the QD. The growth occurs preferentially in the [110] direction and elongated GaInP/InP islands are formed. As the overgrowth continues the islands increase laterally in size and GaInP also starts to grow between the islands, but not covering the top of the InP QD's. The growth of GaInP on top of the QD's commences once the islands have begun to coalesce. Using a model based on the STM and TEM results the electronic structures of the QD's have been calculated by eight-band k.p theory. The calculations are in good agreement with the experimental results. Our findings unravel the details of the strain induced energy shift of the QD luminescence previously reported [Pistol , Appl. Phys. Lett. 67, 1438 (1995)]. (Less)
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Physical Review B (Condensed Matter and Materials Physics)
volume
68
issue
12
publisher
American Physical Society
external identifiers
  • wos:000185861900039
  • scopus:0242523816
ISSN
1098-0121
DOI
10.1103/PhysRevB.68.125303
language
English
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yes
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166bb842-520e-481e-ab8a-035bf308c2b5 (old id 298278)
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2007-09-13 14:22:38
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@article{166bb842-520e-481e-ab8a-035bf308c2b5,
  abstract     = {We have studied the early stages of GaInP overgrowth on InP quantum dots (QD's) experimentally and theoretically. A direct correlation between the surface morphology and the optical properties of individual InP QD's is made using scanning tunneling microscopy (STM) and scanning tunneling luminescence. The geometric structure of the islands is further investigated using cross-sectional transmission electron microscopy (TEM). The overgrowth occurs in three stages; initially the InP QD's act as seeding points for the overgrowth, where the GaInP grows laterally from the side facets of the QD. The growth occurs preferentially in the [110] direction and elongated GaInP/InP islands are formed. As the overgrowth continues the islands increase laterally in size and GaInP also starts to grow between the islands, but not covering the top of the InP QD's. The growth of GaInP on top of the QD's commences once the islands have begun to coalesce. Using a model based on the STM and TEM results the electronic structures of the QD's have been calculated by eight-band k.p theory. The calculations are in good agreement with the experimental results. Our findings unravel the details of the strain induced energy shift of the QD luminescence previously reported [Pistol , Appl. Phys. Lett. 67, 1438 (1995)].},
  articleno    = {125303},
  author       = {Johansson, Mikael and Håkanson, Ulf and Holm, Magnus and Persson, Jonas and Sass, T and Johansson, Jonas and Pryor, C and Montelius, Lars and Seifert, Werner and Samuelson, Lars and Pistol, Mats-Erik},
  issn         = {1098-0121},
  language     = {eng},
  number       = {12},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots},
  url          = {http://dx.doi.org/10.1103/PhysRevB.68.125303},
  volume       = {68},
  year         = {2003},
}