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Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

Azevedo, G D; Glover, Chris LU ; Ridgway, M C; Yu, K M and Foran, G J (2003) In Physical Review B (Condensed Matter and Materials Physics) 68(11: 115204).
Abstract
Extended x-ray absorption fine structure measurements have been used to characterize the low-temperature, thermally induced structural relaxation of amorphous InP. We show reductions in both chemical and structural disorder associated with homopolar and heteropolar bonding, respectively, are operative during structural relaxation of this amorphous compound semiconductor. The latter is analogous to that observed in the amorphous elemental semiconductors Ge and Si. Though a reduction in homopolar bonding accompanies structural relaxation, the fully relaxed, minimum-energy configuration of the amorphous phase still retains chemical disorder.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
68
issue
11: 115204
publisher
American Physical Society
external identifiers
  • wos:000185829300046
  • scopus:0242679713
ISSN
1098-0121
DOI
10.1103/PhysRevB.68.115204
language
English
LU publication?
yes
id
4f11d5fd-3822-4cb7-94a9-4ee32e1458ea (old id 298597)
alternative location
http://link.aps.org/abstract/PRB/v68/e115204
date added to LUP
2007-08-22 14:24:45
date last changed
2018-06-10 04:32:29
@article{4f11d5fd-3822-4cb7-94a9-4ee32e1458ea,
  abstract     = {Extended x-ray absorption fine structure measurements have been used to characterize the low-temperature, thermally induced structural relaxation of amorphous InP. We show reductions in both chemical and structural disorder associated with homopolar and heteropolar bonding, respectively, are operative during structural relaxation of this amorphous compound semiconductor. The latter is analogous to that observed in the amorphous elemental semiconductors Ge and Si. Though a reduction in homopolar bonding accompanies structural relaxation, the fully relaxed, minimum-energy configuration of the amorphous phase still retains chemical disorder.},
  author       = {Azevedo, G D and Glover, Chris and Ridgway, M C and Yu, K M and Foran, G J},
  issn         = {1098-0121},
  language     = {eng},
  number       = {11: 115204},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide},
  url          = {http://dx.doi.org/10.1103/PhysRevB.68.115204},
  volume       = {68},
  year         = {2003},
}