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Thickness dependent magnetic properties of (Ga,Mn) As ultrathin films

Proselkov, O.; Sztenkiel, D.; Stefanowicz, W.; Aleszkiewicz, M.; Sadowski, Janusz LU ; Dietl, T. and Sawicki, M. (2012) In Applied Physics Letters 100(26).
Abstract
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn) As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferromagnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate modifications to take a nonuniform distribution of holes and Mn cations into account. (C) 2012 American... (More)
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn) As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferromagnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate modifications to take a nonuniform distribution of holes and Mn cations into account. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731202] (Less)
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organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
100
issue
26
publisher
American Institute of Physics
external identifiers
  • wos:000305831500046
  • scopus:84863308603
ISSN
0003-6951
DOI
10.1063/1.4731202
language
English
LU publication?
yes
id
907b252c-368f-4c0f-9f07-20f1c9e111bb (old id 3001708)
date added to LUP
2012-08-21 10:49:02
date last changed
2017-07-02 03:10:11
@article{907b252c-368f-4c0f-9f07-20f1c9e111bb,
  abstract     = {We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn) As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferromagnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate modifications to take a nonuniform distribution of holes and Mn cations into account. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731202]},
  articleno    = {262405},
  author       = {Proselkov, O. and Sztenkiel, D. and Stefanowicz, W. and Aleszkiewicz, M. and Sadowski, Janusz and Dietl, T. and Sawicki, M.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {26},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Thickness dependent magnetic properties of (Ga,Mn) As ultrathin films},
  url          = {http://dx.doi.org/10.1063/1.4731202},
  volume       = {100},
  year         = {2012},
}