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Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions

Shorubalko, Ivan LU ; Xu, Hongqi LU ; Omling, Pär LU and Samuelson, Lars LU (2003) In Applied Physics Letters 83(12). p.2369-2371
Abstract
The current-voltage (I-V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I-V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. (C) 2003 American Institute of Physics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
12
pages
2369 - 2371
publisher
American Institute of Physics
external identifiers
  • wos:000185333200023
  • scopus:0142121702
ISSN
0003-6951
DOI
10.1063/1.1605822
language
English
LU publication?
yes
id
be051d59-78b8-48d2-a249-9488f101926a (old id 301477)
date added to LUP
2007-09-21 12:54:16
date last changed
2018-10-03 10:37:16
@article{be051d59-78b8-48d2-a249-9488f101926a,
  abstract     = {The current-voltage (I-V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I-V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. (C) 2003 American Institute of Physics.},
  author       = {Shorubalko, Ivan and Xu, Hongqi and Omling, Pär and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {12},
  pages        = {2369--2371},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions},
  url          = {http://dx.doi.org/10.1063/1.1605822},
  volume       = {83},
  year         = {2003},
}