Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.
(2012) In Nano Letters 12(9). p.4838-4842- Abstract
- We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3047563
- author
- Paschoal, Waldomiro LU ; Kumar, Sandeep LU ; Borschel, Christian ; Wu, Phillip LU ; Canali, Carlo M ; Ronning, Carsten ; Samuelson, Lars LU and Pettersson, Håkan
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 12
- issue
- 9
- pages
- 4838 - 4842
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000308576000069
- pmid:22889471
- scopus:84866332692
- pmid:22889471
- ISSN
- 1530-6992
- DOI
- 10.1021/nl302318f
- language
- English
- LU publication?
- yes
- id
- 0ad8ed23-f2ed-4915-8fcd-e5f9e18ba024 (old id 3047563)
- date added to LUP
- 2016-04-01 13:33:05
- date last changed
- 2023-11-12 18:25:02
@article{0ad8ed23-f2ed-4915-8fcd-e5f9e18ba024, abstract = {{We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.}}, author = {{Paschoal, Waldomiro and Kumar, Sandeep and Borschel, Christian and Wu, Phillip and Canali, Carlo M and Ronning, Carsten and Samuelson, Lars and Pettersson, Håkan}}, issn = {{1530-6992}}, language = {{eng}}, number = {{9}}, pages = {{4838--4842}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Hopping Conduction in Mn Ion-Implanted GaAs Nanowires.}}, url = {{http://dx.doi.org/10.1021/nl302318f}}, doi = {{10.1021/nl302318f}}, volume = {{12}}, year = {{2012}}, }