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Nanoimprint-induced effects on electrical and optical properties of quantum well structures

Zankovych, S; Maximov, I; Shorubalko, Ivan LU ; Seekamp, J; Beck, Marc LU ; Romanov, S; Reuter, D; Schafmeister, P; Wieck, AD and Ahopelto, J, et al. (2003) 28th International Conference on Micro- and Nano-Engineering In Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering) 67-8. p.214-220
Abstract
A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As-InP and GaAs-Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments... (More)
A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As-InP and GaAs-Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed. (C) 2003 Elsevier Science B.V. All rights reserved. (Less)
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Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
quantum transport, nanoimprint lithography, quantum wells
in
Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering)
volume
67-8
pages
214 - 220
publisher
Elsevier
conference name
28th International Conference on Micro- and Nano-Engineering
external identifiers
  • wos:000183842100030
  • scopus:0038697364
ISSN
0167-9317
1873-5568
DOI
10.1016/S0167-9317(03)00074-1
language
English
LU publication?
yes
id
054e1edf-5fb8-4350-b3d9-e90d8b8d9a1a (old id 307057)
date added to LUP
2007-09-24 15:20:51
date last changed
2018-05-29 11:51:12
@inproceedings{054e1edf-5fb8-4350-b3d9-e90d8b8d9a1a,
  abstract     = {A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As-InP and GaAs-Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed. (C) 2003 Elsevier Science B.V. All rights reserved.},
  author       = {Zankovych, S and Maximov, I and Shorubalko, Ivan and Seekamp, J and Beck, Marc and Romanov, S and Reuter, D and Schafmeister, P and Wieck, AD and Ahopelto, J and Torres, CMS and Montelius, Lars},
  booktitle    = {Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering)},
  issn         = {0167-9317},
  keyword      = {quantum transport,nanoimprint lithography,quantum wells},
  language     = {eng},
  pages        = {214--220},
  publisher    = {Elsevier},
  title        = {Nanoimprint-induced effects on electrical and optical properties of quantum well structures},
  url          = {http://dx.doi.org/10.1016/S0167-9317(03)00074-1},
  volume       = {67-8},
  year         = {2003},
}