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High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

Lehmann, Sebastian LU ; Jacobsson, Daniel LU ; Deppert, Knut LU and Dick Thelander, Kimberly LU (2012) In Nano Reseach 5(7). p.470-476
Abstract
We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the... (More)
We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowires, GaAs, heterostructure, polytypism, metal-organic vapor phase, epitaxy (MOVPE)-growth
in
Nano Reseach
volume
5
issue
7
pages
470 - 476
publisher
Springer
external identifiers
  • wos:000306593900004
  • scopus:84864119019
ISSN
1998-0124
DOI
10.1007/s12274-012-0232-3
language
English
LU publication?
yes
id
4f3c8c89-b54e-4ee0-81ac-257484f44eb1 (old id 3079687)
date added to LUP
2012-09-25 13:24:11
date last changed
2017-09-17 03:58:14
@article{4f3c8c89-b54e-4ee0-81ac-257484f44eb1,
  abstract     = {We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.},
  author       = {Lehmann, Sebastian and Jacobsson, Daniel and Deppert, Knut and Dick Thelander, Kimberly},
  issn         = {1998-0124},
  keyword      = {Nanowires,GaAs,heterostructure,polytypism,metal-organic vapor phase,epitaxy (MOVPE)-growth},
  language     = {eng},
  number       = {7},
  pages        = {470--476},
  publisher    = {Springer},
  series       = {Nano Reseach},
  title        = {High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires},
  url          = {http://dx.doi.org/10.1007/s12274-012-0232-3},
  volume       = {5},
  year         = {2012},
}