Advanced

In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn)As Ferromagnetic Semiconductors

Kamara, S.; Terki, F.; Charar, S.; Dehbaoui, M.; Sadowski, Janusz LU and Galera, R. -M. (2012) In Journal of Nanoscience and Nanotechnology 12(6). p.4868-4873
Abstract
We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H

is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two

regions of temperature. At T <TC/2, the “square-shape” signal and at T >TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization

reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density... (More)
We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H

is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two

regions of temperature. At T <TC/2, the “square-shape” signal and at T >TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization

reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ferromagnetic semiconductors, spintronics, Planar Hall effect
in
Journal of Nanoscience and Nanotechnology
volume
12
issue
6
pages
4868 - 4873
publisher
American Scientific Publishers
external identifiers
  • wos:000306861000061
  • scopus:84863952012
ISSN
1533-4880
DOI
10.1166/jnn.2012.4923
language
English
LU publication?
yes
id
d2f84617-07fb-432e-82c2-bef858cc84dc (old id 3128760)
date added to LUP
2012-10-12 21:06:33
date last changed
2017-01-01 03:25:07
@article{d2f84617-07fb-432e-82c2-bef858cc84dc,
  abstract     = {We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H<br/><br>
is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two<br/><br>
regions of temperature. At T &lt;TC/2, the “square-shape” signal and at T &gt;TC/2 the “zigzag-shape” signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization<br/><br>
reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.},
  author       = {Kamara, S. and Terki, F. and Charar, S. and Dehbaoui, M. and Sadowski, Janusz and Galera, R. -M.},
  issn         = {1533-4880},
  keyword      = {ferromagnetic semiconductors,spintronics,Planar Hall effect},
  language     = {eng},
  number       = {6},
  pages        = {4868--4873},
  publisher    = {American Scientific Publishers},
  series       = {Journal of Nanoscience and Nanotechnology},
  title        = {In-Plane Magnetic Anisotropy and Temperature Dependence of Switching Field in (Ga, Mn)As Ferromagnetic Semiconductors},
  url          = {http://dx.doi.org/10.1166/jnn.2012.4923},
  volume       = {12},
  year         = {2012},
}