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Electron Spectroscopic Studies of Homogenous (GaMn) As Layers

Ulfat, Intikab; Adell, Johann; Pal, Prabir; Sadowski, Janusz LU ; Ilver, Lars and Kanski, Janusz (2012) In Advanced Materials Research 463-464. p.380-384
Abstract
By incorporating magnetism into semiconductors, it may possibly be viable to enhance the functionality of materials. An exceptionally important material in this context is GaAs, which can be doped with Mn atoms. (GaMn)As has fascinated research community as a promising candidate for spintronic application. It is quite appealing due to both its compatibility with existing III-V technology and great progress in improving its magnetic properties. Being fabricated by low temperature molecular beam epitaxy (LT-MBE), due to thermal instability at elevated temperatures, the material contains a high density of various defects compensating Mn acceptors. It is a well-established fact that the ferromagnetic state of (GaMn)As can be stabilized via... (More)
By incorporating magnetism into semiconductors, it may possibly be viable to enhance the functionality of materials. An exceptionally important material in this context is GaAs, which can be doped with Mn atoms. (GaMn)As has fascinated research community as a promising candidate for spintronic application. It is quite appealing due to both its compatibility with existing III-V technology and great progress in improving its magnetic properties. Being fabricated by low temperature molecular beam epitaxy (LT-MBE), due to thermal instability at elevated temperatures, the material contains a high density of various defects compensating Mn acceptors. It is a well-established fact that the ferromagnetic state of (GaMn)As can be stabilized via post growth annealing. Nevertheless, in general, the annealed (GaMn)As layers do not remain useful for further epitaxial overgrowth that might be included in multilayer structure. We present a summary of our investigations regarding the synchrotron-based characterization of (GaMn)As layers grown via molecular beam epitaxy carried out at the Swedish National Facility of Synchrotron Radiation-the MAX-lab aiming at the reduction of the density of Mn interstitial and increase in the content of Mn. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
(Ga, Mn)As, synchrotron-based characterozation, diluted magnetic semiconductors
in
Advanced Materials Research
volume
463-464
pages
380 - 384
publisher
Trans Tech Publications Ltd
external identifiers
  • scopus:84857311380
ISSN
1022-6680
DOI
10.4028/www.scientific.net/AMR.463-464.380
language
English
LU publication?
yes
id
79626947-932c-43c4-abac-e374ee52d994 (old id 3128861)
date added to LUP
2012-10-12 21:05:49
date last changed
2017-01-01 03:35:25
@article{79626947-932c-43c4-abac-e374ee52d994,
  abstract     = {By incorporating magnetism into semiconductors, it may possibly be viable to enhance the functionality of materials. An exceptionally important material in this context is GaAs, which can be doped with Mn atoms. (GaMn)As has fascinated research community as a promising candidate for spintronic application. It is quite appealing due to both its compatibility with existing III-V technology and great progress in improving its magnetic properties. Being fabricated by low temperature molecular beam epitaxy (LT-MBE), due to thermal instability at elevated temperatures, the material contains a high density of various defects compensating Mn acceptors. It is a well-established fact that the ferromagnetic state of (GaMn)As can be stabilized via post growth annealing. Nevertheless, in general, the annealed (GaMn)As layers do not remain useful for further epitaxial overgrowth that might be included in multilayer structure. We present a summary of our investigations regarding the synchrotron-based characterization of (GaMn)As layers grown via molecular beam epitaxy carried out at the Swedish National Facility of Synchrotron Radiation-the MAX-lab aiming at the reduction of the density of Mn interstitial and increase in the content of Mn.},
  author       = {Ulfat, Intikab and Adell, Johann and Pal, Prabir and Sadowski, Janusz and Ilver, Lars and Kanski, Janusz},
  issn         = {1022-6680},
  keyword      = {(Ga,Mn)As,synchrotron-based characterozation,diluted magnetic semiconductors},
  language     = {eng},
  pages        = {380--384},
  publisher    = {Trans Tech Publications Ltd},
  series       = {Advanced Materials Research},
  title        = {Electron Spectroscopic Studies of Homogenous (GaMn) As Layers},
  url          = {http://dx.doi.org/10.4028/www.scientific.net/AMR.463-464.380},
  volume       = {463-464},
  year         = {2012},
}