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Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

Sorensen, BS; Lindelof, PE; Sadowski, Janusz LU ; Mathieu, R and Svedlindh, P (2003) In Applied Physics Letters 82(14). p.2287-2289
Abstract
We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
82
issue
14
pages
2287 - 2289
publisher
American Institute of Physics
external identifiers
  • wos:000182018800031
  • scopus:0345373811
ISSN
0003-6951
DOI
language
English
LU publication?
yes
id
634a35a0-b6dc-47f5-96f5-620a73364cad (old id 315007)
date added to LUP
2007-09-22 11:56:54
date last changed
2018-05-29 12:23:44
@article{634a35a0-b6dc-47f5-96f5-620a73364cad,
  abstract     = {We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As-GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin. (C) 2003 American Institute of Physics.},
  author       = {Sorensen, BS and Lindelof, PE and Sadowski, Janusz and Mathieu, R and Svedlindh, P},
  issn         = {0003-6951},
  language     = {eng},
  number       = {14},
  pages        = {2287--2289},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films},
  url          = {http://dx.doi.org/},
  volume       = {82},
  year         = {2003},
}