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Structure of amorphous silicon investigated by EXAFS

Glover, Chris LU ; Foran, GJ and Ridgway, MC (2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 199. p.195-199
Abstract
The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose... (More)
The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed. (C) 2002 Elsevier Science B.V. All rights reserved. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
keywords
amorphous semiconductors, extended X-ray absorption fine structure, spectroscopy, silicon
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
199
pages
195 - 199
publisher
Elsevier
external identifiers
  • wos:000180925400039
  • scopus:0037243215
ISSN
0168-583X
DOI
10.1016/S0168-583X(02)01544-6
language
English
LU publication?
yes
id
fd50b747-7911-47f3-be6d-48820bb75668 (old id 318512)
date added to LUP
2007-09-03 11:15:16
date last changed
2018-05-29 11:38:18
@article{fd50b747-7911-47f3-be6d-48820bb75668,
  abstract     = {The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed. (C) 2002 Elsevier Science B.V. All rights reserved.},
  author       = {Glover, Chris and Foran, GJ and Ridgway, MC},
  issn         = {0168-583X},
  keyword      = {amorphous semiconductors,extended X-ray absorption fine structure,spectroscopy,silicon},
  language     = {eng},
  pages        = {195--199},
  publisher    = {Elsevier},
  series       = {Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms},
  title        = {Structure of amorphous silicon investigated by EXAFS},
  url          = {http://dx.doi.org/10.1016/S0168-583X(02)01544-6},
  volume       = {199},
  year         = {2003},
}