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Microcircuit tailoring in ferromagnetic semiconductor (Ga,Mn)As

Figielski, T; Wosinski, T; Morawski, A; Pelya, O; Sadowski, Janusz LU ; Toth, AL and Jagielski, J (2003) In Physica Status Solidi. A, Applied Research 195(1). p.228-231
Abstract
In order to search for novel giant-magnetoresistance systems, we fabricated and investigated narrow constrictions in the layers of the ferromagnetic semiconductor (Ga,Mn)As. We found that constrictions a few hundred nanometers wide, tailored by means of the electron-beam lithography and wet etching, were not conducting at liquid helium temperatures unless illuminated, probably due to the trapping action of surface states appearing on an extra surface area denuded by the etching. To avoid this, we used selective implantation of oxygen ions into the ferromagnetic layer to tailor the constrictions. We have shown that such an implantation inactivates Mn acceptors in the layer and destroys ferromagnetism. We propose an application of oxygen ion... (More)
In order to search for novel giant-magnetoresistance systems, we fabricated and investigated narrow constrictions in the layers of the ferromagnetic semiconductor (Ga,Mn)As. We found that constrictions a few hundred nanometers wide, tailored by means of the electron-beam lithography and wet etching, were not conducting at liquid helium temperatures unless illuminated, probably due to the trapping action of surface states appearing on an extra surface area denuded by the etching. To avoid this, we used selective implantation of oxygen ions into the ferromagnetic layer to tailor the constrictions. We have shown that such an implantation inactivates Mn acceptors in the layer and destroys ferromagnetism. We propose an application of oxygen ion implantation as a method of fabricating microcircuits in future spin electronics based on Mn-containing III-V semiconductor compounds. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physica Status Solidi. A, Applied Research
volume
195
issue
1
pages
228 - 231
publisher
John Wiley & Sons
external identifiers
  • wos:000180796700037
  • scopus:0037279760
ISSN
0031-8965
DOI
language
English
LU publication?
yes
id
2109ece7-dcf3-4ef2-ae98-6b2d657ad3b2 (old id 319206)
date added to LUP
2007-09-03 08:10:04
date last changed
2018-05-29 12:26:55
@article{2109ece7-dcf3-4ef2-ae98-6b2d657ad3b2,
  abstract     = {In order to search for novel giant-magnetoresistance systems, we fabricated and investigated narrow constrictions in the layers of the ferromagnetic semiconductor (Ga,Mn)As. We found that constrictions a few hundred nanometers wide, tailored by means of the electron-beam lithography and wet etching, were not conducting at liquid helium temperatures unless illuminated, probably due to the trapping action of surface states appearing on an extra surface area denuded by the etching. To avoid this, we used selective implantation of oxygen ions into the ferromagnetic layer to tailor the constrictions. We have shown that such an implantation inactivates Mn acceptors in the layer and destroys ferromagnetism. We propose an application of oxygen ion implantation as a method of fabricating microcircuits in future spin electronics based on Mn-containing III-V semiconductor compounds.},
  author       = {Figielski, T and Wosinski, T and Morawski, A and Pelya, O and Sadowski, Janusz and Toth, AL and Jagielski, J},
  issn         = {0031-8965},
  language     = {eng},
  number       = {1},
  pages        = {228--231},
  publisher    = {John Wiley & Sons},
  series       = {Physica Status Solidi. A, Applied Research},
  title        = {Microcircuit tailoring in ferromagnetic semiconductor (Ga,Mn)As},
  url          = {http://dx.doi.org/},
  volume       = {195},
  year         = {2003},
}