Advanced

Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures

Sass, T; Pietzonka, I; Borgström, Magnus LU ; Gustafson, Boel LU ; Wernersson, Lars-Erik LU and Seifert, Werner LU (2003) In Journal of Crystal Growth 248. p.375-379
Abstract
We studied the morphology of GaP/(001)GaAs and GaAs/(001)GaP heterostructures grown by metal-organic vapour-phase epitaxy and found wire-like surface undulations elongated in the [110] direction. We attribute this elongation to anisotropic lateral growth rates in the [110] and [110] directions, which are due to a different roughness of monolayer surface steps. In III-V materials grown by molecular beam epitaxy. such surface corrugations are usually elongated in [110]. We explain this difference by the two growth methods having inverted ratios of lateral growth rates in [110] and [110]. Resonant tunnelling diodes fabricated from the GaP/GaAs heterostructures showed very symmetric I-V characteristics. Their peak-to-valley ratio was limited... (More)
We studied the morphology of GaP/(001)GaAs and GaAs/(001)GaP heterostructures grown by metal-organic vapour-phase epitaxy and found wire-like surface undulations elongated in the [110] direction. We attribute this elongation to anisotropic lateral growth rates in the [110] and [110] directions, which are due to a different roughness of monolayer surface steps. In III-V materials grown by molecular beam epitaxy. such surface corrugations are usually elongated in [110]. We explain this difference by the two growth methods having inverted ratios of lateral growth rates in [110] and [110]. Resonant tunnelling diodes fabricated from the GaP/GaAs heterostructures showed very symmetric I-V characteristics. Their peak-to-valley ratio was limited to 2. most probably due to the corrugation of the GaP barriers. (C) 2002 Elsevier Science B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
resonant tunnelling diodes, GaP, GaAs, metalorganic vapor phase epitaxy, morphology, strain
in
Journal of Crystal Growth
volume
248
pages
375 - 379
publisher
Elsevier
external identifiers
  • wos:000180446900068
  • scopus:0037291991
ISSN
0022-0248
DOI
10.1016/S0022-0248(02)02045-6
language
English
LU publication?
yes
id
1cb677ea-3443-4497-add6-7c65879cf59d (old id 319808)
date added to LUP
2007-09-21 10:37:55
date last changed
2018-01-07 08:56:29
@article{1cb677ea-3443-4497-add6-7c65879cf59d,
  abstract     = {We studied the morphology of GaP/(001)GaAs and GaAs/(001)GaP heterostructures grown by metal-organic vapour-phase epitaxy and found wire-like surface undulations elongated in the [110] direction. We attribute this elongation to anisotropic lateral growth rates in the [110] and [110] directions, which are due to a different roughness of monolayer surface steps. In III-V materials grown by molecular beam epitaxy. such surface corrugations are usually elongated in [110]. We explain this difference by the two growth methods having inverted ratios of lateral growth rates in [110] and [110]. Resonant tunnelling diodes fabricated from the GaP/GaAs heterostructures showed very symmetric I-V characteristics. Their peak-to-valley ratio was limited to 2. most probably due to the corrugation of the GaP barriers. (C) 2002 Elsevier Science B.V. All rights reserved.},
  author       = {Sass, T and Pietzonka, I and Borgström, Magnus and Gustafson, Boel and Wernersson, Lars-Erik and Seifert, Werner},
  issn         = {0022-0248},
  keyword      = {resonant tunnelling diodes,GaP,GaAs,metalorganic vapor phase epitaxy,morphology,strain},
  language     = {eng},
  pages        = {375--379},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures},
  url          = {http://dx.doi.org/10.1016/S0022-0248(02)02045-6},
  volume       = {248},
  year         = {2003},
}