Dependence of Curie temperature on the thickness of epitaxial (Ga,Mn)As film
(2002) In Physical Review B (Condensed Matter and Materials Physics) 66(23).- Abstract
- We present the magnetotransport properties of very thin (5-15 nm) single (Ga,Mn)As layers grown by low-temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical-transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of 7.1x10(20) cm(-3) for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/320197
- author
- Sorensen, BS ; Sadowski, Janusz LU ; Andresen, SE and Lindelof, PE
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 66
- issue
- 23
- publisher
- American Physical Society
- external identifiers
-
- wos:000180279400026
- scopus:0037116189
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.66.233313
- language
- English
- LU publication?
- yes
- id
- 436424f0-aa59-4817-bca5-cc8667225b27 (old id 320197)
- date added to LUP
- 2016-04-01 16:04:04
- date last changed
- 2022-01-28 17:00:55
@article{436424f0-aa59-4817-bca5-cc8667225b27,
abstract = {{We present the magnetotransport properties of very thin (5-15 nm) single (Ga,Mn)As layers grown by low-temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical-transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of 7.1x10(20) cm(-3) for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed.}},
author = {{Sorensen, BS and Sadowski, Janusz and Andresen, SE and Lindelof, PE}},
issn = {{1098-0121}},
language = {{eng}},
number = {{23}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Dependence of Curie temperature on the thickness of epitaxial (Ga,Mn)As film}},
url = {{http://dx.doi.org/10.1103/PhysRevB.66.233313}},
doi = {{10.1103/PhysRevB.66.233313}},
volume = {{66}},
year = {{2002}},
}