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Nanostructured deposition of nanoparticles from the gas phase

Krinke, TJ; Deppert, Knut LU ; Magnusson, Martin LU and Fissan, H (2002) In Particle & Particle Systems Characterization 19(5). p.321-326
Abstract
For many applications, nanoparticles from the gas phase are of interest due to their physical properties. Especially for electronic or optoelectronic applications, the transfer from their random distribution in the gas phase onto flat. substrate surfaces has to be controlled because the particles are needed in exactly defined areas on the substrate. We demonstrate a parallel process for the transfer of charge patterns on oxidized silicon surfaces followed by the deposition of mono-disperse singly charged nanoparticles, which allows the creation of particle arrangements reaching from 100 nm resolution up to structures in the upper micrometer range. The charge patterns are transferred using a polydimethylsiloxane (PDMS) stamp, which is... (More)
For many applications, nanoparticles from the gas phase are of interest due to their physical properties. Especially for electronic or optoelectronic applications, the transfer from their random distribution in the gas phase onto flat. substrate surfaces has to be controlled because the particles are needed in exactly defined areas on the substrate. We demonstrate a parallel process for the transfer of charge patterns on oxidized silicon surfaces followed by the deposition of mono-disperse singly charged nanoparticles, which allows the creation of particle arrangements reaching from 100 nm resolution up to structures in the upper micrometer range. The charge patterns are transferred using a polydimethylsiloxane (PDMS) stamp, which is covered with a metal layer. By applying different voltages to the stamp, negative or positive charges can be transferred. Thus, nanoparticles of different polarities can be guided to certain places. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
PDMS, nanostructure, nanoparticles, contact charging, deposition
in
Particle & Particle Systems Characterization
volume
19
issue
5
pages
321 - 326
publisher
John Wiley & Sons
external identifiers
  • wos:000179398200006
  • scopus:0036859803
ISSN
0934-0866
DOI
10.1002/1521-4117(200211)19:5<321::AID-PPSC321>3.0.CO;2-I
language
English
LU publication?
yes
id
fbb5f25c-1cdf-4729-80e0-4d40fadd9c40 (old id 323354)
date added to LUP
2007-10-29 16:08:05
date last changed
2017-01-01 04:36:44
@article{fbb5f25c-1cdf-4729-80e0-4d40fadd9c40,
  abstract     = {For many applications, nanoparticles from the gas phase are of interest due to their physical properties. Especially for electronic or optoelectronic applications, the transfer from their random distribution in the gas phase onto flat. substrate surfaces has to be controlled because the particles are needed in exactly defined areas on the substrate. We demonstrate a parallel process for the transfer of charge patterns on oxidized silicon surfaces followed by the deposition of mono-disperse singly charged nanoparticles, which allows the creation of particle arrangements reaching from 100 nm resolution up to structures in the upper micrometer range. The charge patterns are transferred using a polydimethylsiloxane (PDMS) stamp, which is covered with a metal layer. By applying different voltages to the stamp, negative or positive charges can be transferred. Thus, nanoparticles of different polarities can be guided to certain places.},
  author       = {Krinke, TJ and Deppert, Knut and Magnusson, Martin and Fissan, H},
  issn         = {0934-0866},
  keyword      = {PDMS,nanostructure,nanoparticles,contact charging,deposition},
  language     = {eng},
  number       = {5},
  pages        = {321--326},
  publisher    = {John Wiley & Sons},
  series       = {Particle & Particle Systems Characterization},
  title        = {Nanostructured deposition of nanoparticles from the gas phase},
  url          = {http://dx.doi.org/10.1002/1521-4117(200211)19:5<321::AID-PPSC321>3.0.CO;2-I},
  volume       = {19},
  year         = {2002},
}