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Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC

Wagner, M; Thinh, NQ; Son, NT; Chen, WM; Janzen, E; Baranov, PG; Mokhov, EN; Hallin, C and Lindström, Lennart LU (2002) In Physical Review B (Condensed Matter and Materials Physics) 66(15).
Abstract
The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
66
issue
15
publisher
American Physical Society
external identifiers
  • wos:000179080800079
  • scopus:0038195883
ISSN
1098-0121
DOI
10.1103/PhysRevB.66.155214
language
English
LU publication?
yes
id
875e6d4b-7056-4826-9740-051cc7de7269 (old id 324105)
date added to LUP
2007-11-16 13:59:13
date last changed
2017-10-01 04:41:55
@article{875e6d4b-7056-4826-9740-051cc7de7269,
  abstract     = {The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.},
  articleno    = {155214},
  author       = {Wagner, M and Thinh, NQ and Son, NT and Chen, WM and Janzen, E and Baranov, PG and Mokhov, EN and Hallin, C and Lindström, Lennart},
  issn         = {1098-0121},
  language     = {eng},
  number       = {15},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC},
  url          = {http://dx.doi.org/10.1103/PhysRevB.66.155214},
  volume       = {66},
  year         = {2002},
}